AOS Semiconductor Product Reliability Report AO7600 / AO7600L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO7600/AO7600L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO7600 /AO7600L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AO7600/AO7600L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. AO7600 and AO7600L are electrically identical. -RoHS Compliant -AO7600L is Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AO7600 Process Standard sub-micron Complementary MOSFET Package Type 6 leads SC70 Lead Frame Cu Die Attach Ag Epoxy Bonding Wire Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 AO7600L (Green) Standard sub-micron Complementary MOSFET 6 leads SC70 Cu Ag Epoxy Au wire Epoxy resin with silica filler Level 1 based on J-STD-020 Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO7600 & AO7600L (Green) Test Item Test Condition Time Point Lot Attribution Total Sample size Number of Failures MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150 c, Vgs=100% of Vgsmax - 10 lots Green: 9 lots 1925 pcs 1826 pcs 0 JESD22A113 2 lots 2 lots 3 lots (Note A*) 539pcs 0 JESD22A108 0 JESD22A108 0 JESD22A110 HTGB HTRB HAST Pressure Pot Temperature Cycle 168hrs 500 hrs 1000 hrs Standard 77pcs / lot Temp = 150 c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 2 lots 2 lots 3 lots (Note A*) 539pcs 130 +/- 2c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121c, 29.7psi, RH=100% 100 hrs 7 lots Green:8 lots 385 pcs 440 pcs (Note B*) 10 lots Green:9 lots 55 pcs / lot 770 pcs 693 pcs 0 JESD22A102 -65c to 150c, air to air 250 / 500 cycles (Note B*) 10 lots Green:9 lots 77 pcs / lot 770 pcs 693 pcs 0 JESD22A104 (Note B*) 77 pcs / lot 96 hrs 77pcs / lot Note A: The HTGB and HTRB reliability data presents total of available AO7600 and AO7600L burn-in data up to the published date Note B: The pressure pot, temperature cycle and HAST reliability data for AO7600L comes from the AOS generic green compound package qualification data. IV. Reliability Evaluation FIT rate (per billion): 5 MTTF = 21493 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO7600/AO7600L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (4x77x168 +4x77x500+6x77x1000) x258] = 5 9 8 MTTF = 10 / FIT = 1.88 x 10 hrs = 21493 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K