Reliability Report

AOS Semiconductor
Product Reliability Report
AO7600 / AO7600L,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
This AOS product reliability report summarizes the qualification result for AO7600/AO7600L.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO7600
/AO7600L passes AOS quality and reliability requirements. The released product will be
categorized by the process family and be monitored on a quarterly basis for continuously
improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AO7600/AO7600L uses advanced trench technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level
shifted high side switch, an inverter, and for a host of other applications. Both devices are
ESD protected. AO7600 and AO7600L are electrically identical.
-RoHS Compliant
-AO7600L is Halogen Free
Detailed information refers to datasheet.
II. Die / Package Information:
AO7600
Process
Standard sub-micron
Complementary MOSFET
Package Type
6 leads SC70
Lead Frame
Cu
Die Attach
Ag Epoxy
Bonding Wire
Au wire
Mold Material
Epoxy resin with silica filler
MSL (moisture sensitive level) Level 1 based on J-STD-020
AO7600L (Green)
Standard sub-micron
Complementary MOSFET
6 leads SC70
Cu
Ag Epoxy
Au wire
Epoxy resin with silica filler
Level 1 based on J-STD-020
Note * based on information provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO7600 & AO7600L (Green)
Test Item
Test Condition
Time
Point
Lot
Attribution
Total
Sample
size
Number
of
Failures
MSL
Precondition
168hr 85°c
/85%RH +3
cycle
reflow@260°c
Temp = 150 c,
Vgs=100% of
Vgsmax
-
10 lots
Green: 9 lots
1925 pcs
1826 pcs
0
JESD22A113
2 lots
2 lots
3 lots
(Note A*)
539pcs
0
JESD22A108
0
JESD22A108
0
JESD22A110
HTGB
HTRB
HAST
Pressure Pot
Temperature
Cycle
168hrs
500 hrs
1000 hrs
Standard
77pcs / lot
Temp = 150 c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
2 lots
2 lots
3 lots
(Note A*)
539pcs
130 +/- 2c,
85%RH, 33.3
psi, Vgs = 100%
of Vgs max
121c, 29.7psi,
RH=100%
100 hrs
7 lots
Green:8 lots
385 pcs
440 pcs
(Note B*)
10 lots
Green:9 lots
55 pcs / lot
770 pcs
693 pcs
0
JESD22A102
-65c to 150c,
air to air
250 / 500
cycles
(Note B*)
10 lots
Green:9 lots
77 pcs / lot
770 pcs
693 pcs
0
JESD22A104
(Note B*)
77 pcs / lot
96 hrs
77pcs / lot
Note A: The HTGB and HTRB reliability data presents total of available AO7600 and
AO7600L burn-in data up to the published date
Note B: The pressure pot, temperature cycle and HAST reliability data for AO7600L comes
from the AOS generic green compound package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 5
MTTF = 21493 years
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO7600/AO7600L). Failure Rate Determination
is based on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 1.83 x 10 / [2x (4x77x168 +4x77x500+6x77x1000) x258] = 5
9
8
MTTF = 10 / FIT = 1.88 x 10 hrs = 21493 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
-5
K = Boltzmann’s constant, 8.617164 X 10 eV / K