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KSMP6875
KERSMI ELECTRONIC CO.,LTD.
-20V P-channel MOSFET
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
-20V
RDSON
ID
0.03Ω
-6A
1)
2)
Low gate charge.
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOP-8
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-20
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-6
Continuous Drain Current-T=100℃
-20
Pulsed Drain Current2
—
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
2
TJ, TSTG
Operating and Storage Junction Temperature
-55 to
ID
Range
150
A
mJ
W
℃
Thermal Characteristics
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KSMP6875
KERSMI ELECTRONIC CO.,LTD.
-20V P-channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
78
RƟJA
Thermal Resistance, Junction to Ambient1
40
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMP6875
KSMP6875
SOP-8
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-20
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-0.4
-0.8
-1.5
V
VDS=10V,ID=6A
—
0.024
0.03
VDS=2.5V,ID=5A
—
0.033
0.04
VDS=5V,ID=12A
—
—
—
—
2250
—
—
500
—
—
200
—
—
8
16
—
15
27
—
98
135
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
—
35
55
Qg
Total Gate Charge
—
23
31
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
3.9
—
Gate-Drain “Miller” Charge
ID=6A
—
5.5
—
ns
ns
ns
ns
nC
nC
nC
—
-0.7
-1.2
V
—
—
—
ns
—
—
—
nC
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMP6875
KERSMI ELECTRONIC CO.,LTD.
-20V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation with
with Temperature .
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
Figure 4. On-Resistance Variation
Gate-to-Source Voltage
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KSMP6875
KERSMI ELECTRONIC CO.,LTD.
-20V P-channel MOSFET
Figure 5. Transfer Characteristics
Figure 7. Gate Charge Characteristics.
Figure 6. Body Diode Forward
Voltage Variation with Source
Current and Temperature.
Figure 8. Maximum Safe Operating Area.
Figure 9: Normalized Maximum Transient Thermal Impedance
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