参数PDF下载

KSMP4141
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
-30V
RDSON
ID
50MΩ
-5.3A
1)
2)
Low gate charge.
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOP-8
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-5.3
Continuous Drain Current-T=100℃
-50
Pulsed Drain Current2
—
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
2.5
TJ, TSTG
Operating and Storage Junction Temperature
-55 to
Range
+175
ID
A
mJ
W
℃
Thermal Characteristics
www.kersemi.com
1
KSMP4141
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
150
RƟJA
Thermal Resistance, Junction to Ambient1
25
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMP4141
KSMP4141
SOP-8
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-30
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-1
-1.7
-3
V
VDS=10V,ID=6A
—
42
50
VDS=2.5V,ID=5A
—
65
80
VDS=5V,ID=12A
—
10
—
—
528
—
—
132
—
—
70
—
—
7
14
—
13
24
—
14
25
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
MΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
—
7
—
Qg
Total Gate Charge
—
10
14
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
2.2
—
Gate-Drain “Miller” Charge
ID=6A
—
2
—
ns
ns
ns
ns
nC
nC
nC
—
-0.8
-1.2
V
—
—
—
ns
—
—
—
nC
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
www.kersemi.com
2
KSMP4141
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
unless otherwise noted
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation with Temperature . Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
www.kersemi.com
3
KSMP4141
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Figure 7: Gate-Charge Characteristics
Figure 8.Maximum Safe Operating Area
Figure 9: Normalized Maximum Transient Thermal Impedance
www.kersemi.com
4