UNISONIC TECHNOLOGIES CO., LTD UT8205AZ Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205AZ uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) ≤ 28 mΩ @ VGS=4.5V, ID=6.0A * Ultra low gate charge ( typical 23 nC ) * Low reverse transfer Capacitance ( CRSS = typical 150 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Note: UT8205AZG-AG6-R UT8205AZG-S08-R UT8205AZG-P08-R Pin Assignment: S: Source Package SOT-26 SOP-8 TSSOP-8 G: Gate D: Drain Pin Assignment 1 2 3 4 5 6 7 8 S1 D S2 G2 D G1 D S1 S1 G1 G2 S2 S2 D D S1 S1 G1 G2 S2 S2 D Packing Tape Reel Tape Reel Tape Reel MARKING SOP-8 TSSOP-8 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd SOT-26 1 of 3 QW-R502-886.c UT8205AZ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 20 V ±12 V Continuous 6 A Drain Current (Note 2) 20 A Pulsed SOT-26 1.14 W Power Dissipation (TA=25°C) (Note 3) PD SOP-8 1.6 W TSSOP-8 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 3. Pulse width limited by TJ(MAX) SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER SYMBOL SOT-26 SOP-8 TSSOP-8 Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2% Junction to Ambient (Note) θJA RATINGS 110 78 125 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Breakdown Voltage Temperature Coefficient ∆BVDSS ∆TJ BVDSS TEST CONDITIONS VGS=0V, ID=250µA IDSS IGSS VDS=20V, VGS=0V, VGS=±8V VGS(TH) Drain-Source On-State Resistance (Note) RDS(ON) VDS=VGS, ID=250µA VGS=4.5V, ID=6.0A VGS=2.5V, ID=5.2A DYNAMIC PARAMETERS Input Capacitance CISS VDS=20V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) VGS=5V, VDS=10V, RD=10Ω, Turn-ON Rise Time tR R Turn-OFF Delay Time tD(OFF) G=6Ω, ID=1A Turn-OFF Fall-Time tF Total Gate Charge(Note) QG VDS =20V, VGS =5V, ID =6.0A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS=1.7A, VGS=0V Diode Continuous Forward Current IS VD=VG, VS=1.3V Note: Surface mounted on 1 in2 copper pad of FR4 board. www.unisonic.com.tw TYP MAX UNIT 20 ID=1mA, Reference to 25°C Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage UNISONIC TECHNOLOGIES CO., LTD MIN V 0.03 0.5 V/°C 1 ±10 μA μA 1.5 28 38 V mΩ mΩ 1035 320 150 pF pF pF 30 70 40 65 23 4.5 7 ns ns ns ns nC nC nC 1.2 1.54 V A 2 of 3 QW-R502-886.c UT8205AZ Preliminary UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 3 of 3 QW-R502-886.c