UNISONIC TECHNOLOGIES CO., LTD UT9435HZ

UNISONIC TECHNOLOGIES CO., LTD
UT9435HZ
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE

DESCRIPTION
The UTC UT9435HZ is a P-channel enhancement power
MOSFET. It has low gate charge, fast switching speed and
perfect RDS(ON).
This device is generally applied in power management
applications.

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UT9435HZG-AA3-R
UT9435HZG-AE3-R
UT9435HZG-AG6-R
UT9435HZG-S08-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-223
SOT-23
SOT-26
SOP-8
1
S
S
D
S
2
G
G
D
S
Pin Assignment
3 4 5 6
D D S
D
G
D
S G D D
7
D
8
D
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-740. F
UT9435HZ

Power MOSFET
MARKING
SOT-223
SOT-23
SOT-26
SOP-8
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QW-R502-740. F
UT9435HZ

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-30
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
±5.3
A
Pulsed Drain Current (Note 1, 2)
IDM
±20
A
SOT-223
2.5
W
Power Dissipation
PD
SOT-23/ SOT-26
0.38
W
SOP-8
2.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SOT-23/SOT-26
Junction to Ambient
SOT-223/SOP-8

SYMBOL
θJA
RATINGS
325
50 (Note 3)
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250µA
VDS=-30V,VGS=0V
VDS=0V ,VGS=±20V
-30
VGS(TH)
VDS=VGS, ID=-250µA
VGS=-10V,ID=-5.3A
VGS=-4.5V, ID=-4.2A
VDS=-5V, VGS=-10V
-1
RDS(ON)
On State Drain Current
ID(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-15V,VGS=0V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VDS=-15V,VGS=-10V,
Gate-Source Charge
QGS
ID=-5.3A
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VDD=-15V, ID=-1A,
VGEN=-10V, RG=6Ω,
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
VGS=0V, IS =-5.3A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%
3. Surface Mounted on 1in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-1
±5
44
74
-3
55
135
-20
600
95
85
V
µA
µA
V
mΩ
mΩ
V
pF
pF
pF
50
5
5
33
31
122
70
55
40
45
130
90
nC
nC
nC
ns
ns
ns
ns
-0.84
-1.3
V
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UT9435HZ
TYPICAL CHARACTERISTICS
Drain Current, -ID (A)
Body-Diode Continuous Current, -IS (A)
Drain Current, -ID (µA)
Drain Current, -ID (µA)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-740. F