UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) =1.2Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70ZL-TF1-T 10N70ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-935, A 10N70Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 10 A Continuous ID 10 A Drain Current Pulsed (Note 2) IDM 40 A Single Pulsed (Note 3) EAS 250 mJ Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation 50 W PD Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62.5 2.5 UNIT °C/W °C/W 2 of 6 QW-R502-935,A 10N70Z Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 700 V Drain-Source Leakage Current IDSS VDS = 700V, VGS = 0V 10 µA Forward VGS = 20 V, VDS = 0 V 5 µA Gate-Source Leakage Current IGSS Reverse VGS = -20 V, VDS = 0 V -5 µA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID = 250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A 0.9 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 1570 2040 pF VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS 166 215 pF Reverse Transfer Capacitance CRSS 18 24 pF SWITCHING CHARACTERISTICS 23 55 ns Turn-On Delay Time tD(ON) Turn-On Rise Time tR 69 150 ns VDS=350V, ID =10A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 144 300 ns tF 90 165 ns 44 57 nC Total Gate Charge QG VDS=560V, ID=10A, VGS=10 V Gate-Source Charge QGS 6.7 nC (Note 1, 2) Gate-Drain Charge QGD 18.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode IS 10 A Forward Current Maximum Pulsed Drain-Source Diode ISM 40 A Forward Current Reverse Recovery Time trr 420 ns VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) Reverse Recovery Charge QRR 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-935,A 10N70Z Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-935,A 10N70Z Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-935,A 10N70Z TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 200 150 100 50 0 0 0 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 7 1 2 3 Gate Threshold Voltage, VTH (V) 4 Drain Current vs. Source to Drain Voltage 14 12 Drain Current, ID (A) 6 Drain Current, ID (A) Power MOSFET 5 4 3 2 VGS=10V, ID=5A 1 6 5 1 2 3 4 Drain to Source Voltage, VDS (V) 8 6 4 2 0 0 10 7 0 0 0.25 0.5 0.75 1 1.25 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-935,A