UNISONIC TECHNOLOGIES CO., LTD 7N70-R Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 3.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Order Number Lead Free 7N70L-TF1-T Note: Pin Assignment: G: Gate Package Halogen Free 7N70G-TF1-T TO-220F1 D: Drain S: Source Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-066.a 7N70-R Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 700 V ±30 V TC = 25°C 7.0 A Continuous Drain Current ID TC = 100°C 4.7 A Drain Current Pulsed (Note 2) IDM 28 A Avalanche Energy, Single Pulsed (Note 3) EAS 490 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC = 25°C) PD 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=20mH, IAS=7.0A, VDD=50V, RG=0 Ω, Starting TJ=25°C 4. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ=25°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 2.6 UNIT °C/W °C/W 2 of 6 QW-R209-066.a 7N70-R Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 560V, TC = 125°C Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V ID = 250mA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Drain-Source ON-State Resistance RDS(ON) VGS = 10V, ID = 3.5A Forward Transconductance (Note 1) gFS VDS = 40V, ID = 3.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-on Delay Time tD(ON) VDD = 30V, ID = 0.5A Turn-on Rise Time tR RG=25Ω, VGS=10V Turn-off Delay Time tD(OFF) (Note 1, 2) Turn-off Fall Time tF Total Gate Charge QG VDS = 50V, ID = 1.3A, Gate-Source Charge QGS VGS = 10V (Note 1, 2) Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =7.0A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.0A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 700 BVDSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1 1 100 -100 0.67 2.0 V μA μA nA nA V/°C 4.0 1.4 8.0 V Ω S 750 100 13 pF pF pF 78 74 218 63 33 8.6 8.3 ns ns ns ns nC nC nC 320 2.4 1.4 V 7.0 A 28 A ns μC 3 of 6 QW-R209-066.a 7N70-R Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-066.a 7N70-R Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-066.a 7N70-R Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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