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Analog Power
AMA520C
N & P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
-20
rDS(on) (mΩ)
58 @ VGS = 4.5V
82 @ VGS = 2.5V
112 @ VGS = -4.5V
172 @ VGS = -2.5V
DFN2X2-6L
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
20
-20
VGS
Gate-Source Voltage
±8
±8
TA=25°C
4.5
-4.5
ID
Continuous Drain Current a
TA=70°C
3.9
3.8
IDM
Pulsed Drain Current b
20
-20
IS
2.6
-2.5
Continuous Source Current (Diode Conduction) a
T
=25°C
1.5
1.5
A
PD
Power Dissipation a
TA=70°C
0.95
0.95
TJ, Tstg
-55 to 150
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient a
ID(A)
4.5
4.2
-4.5
-4.2
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
45
RθJA
85
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AMA520C_1B
Analog Power
AMA520C
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
rDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
(N-ch)
VDS = -16 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 4.5 V
(N-ch)
VDS = -5 V, VGS = -4.5 V (P-ch)
VGS = 4.5 V, ID = 3.6 A
(N-ch)
VGS = 2.5 V, ID = 3.4 A (N-ch)
VGS = -4.5 V, ID = -3.6 A (P-ch)
VGS = -2.5 V, ID = -3.4 A (P-ch)
VDS = 10 V, ID = 3.6 A
(N-ch)
VDS = -10 V, ID = -3.6 A (P-ch)
IS = 1.3 A, VGS = 0 V
(N-ch)
IS = -1.3 A, VGS = 0 V
(P-ch)
Dynamic
N - Channel
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
P - Channel
VDS = -10 V, VGS = 4.5 V, ID = -3.6 A
N - Channel
VDD = 10 V, RL = 2.8 Ω, ID = 3.6 A,
VGEN = 4.5 V, RGEN = 6 Ω
P - Channel
VDD = -10 V, RL = 2.8 Ω, ID = -3.6 A,
VGEN = -4.5 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
2
Min
Typ
Max
0.3
-0.3
±100
1
-1
10
-10
Unit
V
V
nA
uA
A
A
58
82
112
172
10
5
0.7
-0.83
4
1.0
1.1
6
2.0
0.8
10
8
27
6
10
9
24
28
471
51
39
449
39
34
mΩ
mΩ
S
S
V
V
nC
nC
ns
ns
pF
pF
Publication Order Number:
DS_AMA520C_1B
Analog Power
AMA520C
Typical Electrical Characteristics - N-channel
10
0.12
TJ = 25°C
0.1
8
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
9
2V
0.08
2.5V
0.06
3V
3.5V
3.5V,4V,4.5V,6V
0.04
7
6
5
4
3
2
0.02
1
0
0
0
2
4
6
ID-Drain Current (A)
8
0
10
1
3
4
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.2
TJ = 25°C
0.18
TJ = 25°C
ID = 3.6A
0.16
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
0.14
0.12
0.1
0.08
0.06
1
0.1
0.04
0.02
0.01
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
700
F = 1MHz
9
600
8
6V,4.5V,4V,3.5V
7
Capacitance (pf)
ID - Drain Current (A)
0.2
3V
2.5V
6
5
4
2V
3
Ciss
500
400
300
200
2
Coss
100
1
0
Crss
0
0
0.2
0.4
0.6
0.8
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AMA520C_1B
Analog Power
AMA520C
Typical Electrical Characteristics - N-channel
8
2
7
ID = 3.6A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = 10V
6
5
4
3
2
1.5
1
1
0
0.5
0
2
4
6
8
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
30
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
Limited by
RDS
0.01
0.1
1
10
25
20
15
10
5
0
0.001
100
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.1
0.2
0.1
0.05
0.02
Single Pulse
RθJA(t) = r(t) + RθJA
RθJA = 85°C /W
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AMA520C_1B
Analog Power
AMA520C
Typical Electrical Characteristics - P-channel
10
0.25
TJ = 25°C
8
0.2
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
9
2.5V
0.15
3V
3.5V 4V
0.1
4.5V, 6V
7
6
5
4
3
2
0.05
1
0
0
0
2
4
6
ID-Drain Current (A)
8
0
10
1
3
4
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.4
TJ = 25°C
0.35
TJ = 25°C
ID = -3.6A
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
0.3
0.25
0.2
0.15
0.1
1
0.1
0.05
0.01
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
700
10
F = 1MHz
9
600
6V,4.5V,4V
8
3.5V
3V
7
Capacitance (pf)
ID - Drain Current (A)
0.2
2.5V
6
5
4
3
500
Ciss
400
300
200
2
100
1
Coss
Crss
0
0
0
0.4
0.8
1.2
1.6
0
2
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
5
Publication Order Number:
DS_AMA520C_1B
Analog Power
AMA520C
Typical Electrical Characteristics - P-channel
8
2
7
ID = -3.6A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = -10V
6
5
4
3
2
1.5
1
1
0
0.5
0
2
4
6
8
10
12
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
30
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
Limited by
RDS
25
20
15
10
5
0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.1
0.2
0.1
0.05
0.02
Single Pulse
RθJA(t) = r(t) + RθJA
RθJA = 85°C /W
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AMA520C_1B
Analog Power
AMA520C
Package Information
© Preliminary
7
Publication Order Number:
DS_AMA520C_1B