Analog Power AMA520C N & P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed -20 rDS(on) (mΩ) 58 @ VGS = 4.5V 82 @ VGS = 2.5V 112 @ VGS = -4.5V 172 @ VGS = -2.5V DFN2X2-6L Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±8 ±8 TA=25°C 4.5 -4.5 ID Continuous Drain Current a TA=70°C 3.9 3.8 IDM Pulsed Drain Current b 20 -20 IS 2.6 -2.5 Continuous Source Current (Diode Conduction) a T =25°C 1.5 1.5 A PD Power Dissipation a TA=70°C 0.95 0.95 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a ID(A) 4.5 4.2 -4.5 -4.2 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 45 RθJA 85 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AMA520C_1B Analog Power AMA520C Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd Qg Qgs Qgd td(on) tr td(off) tf td(on) tr td(off) tf Ciss Coss Crss Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±8 V VDS = 16 V, VGS = 0 V (N-ch) VDS = -16 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 4.5 V (N-ch) VDS = -5 V, VGS = -4.5 V (P-ch) VGS = 4.5 V, ID = 3.6 A (N-ch) VGS = 2.5 V, ID = 3.4 A (N-ch) VGS = -4.5 V, ID = -3.6 A (P-ch) VGS = -2.5 V, ID = -3.4 A (P-ch) VDS = 10 V, ID = 3.6 A (N-ch) VDS = -10 V, ID = -3.6 A (P-ch) IS = 1.3 A, VGS = 0 V (N-ch) IS = -1.3 A, VGS = 0 V (P-ch) Dynamic N - Channel VDS = 10 V, VGS = 4.5 V, ID = 3.6 A P - Channel VDS = -10 V, VGS = 4.5 V, ID = -3.6 A N - Channel VDD = 10 V, RL = 2.8 Ω, ID = 3.6 A, VGEN = 4.5 V, RGEN = 6 Ω P - Channel VDD = -10 V, RL = 2.8 Ω, ID = -3.6 A, VGEN = -4.5 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 Min Typ Max 0.3 -0.3 ±100 1 -1 10 -10 Unit V V nA uA A A 58 82 112 172 10 5 0.7 -0.83 4 1.0 1.1 6 2.0 0.8 10 8 27 6 10 9 24 28 471 51 39 449 39 34 mΩ mΩ S S V V nC nC ns ns pF pF Publication Order Number: DS_AMA520C_1B Analog Power AMA520C Typical Electrical Characteristics - N-channel 10 0.12 TJ = 25°C 0.1 8 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 9 2V 0.08 2.5V 0.06 3V 3.5V 3.5V,4V,4.5V,6V 0.04 7 6 5 4 3 2 0.02 1 0 0 0 2 4 6 ID-Drain Current (A) 8 0 10 1 3 4 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.2 TJ = 25°C 0.18 TJ = 25°C ID = 3.6A 0.16 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.14 0.12 0.1 0.08 0.06 1 0.1 0.04 0.02 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 700 F = 1MHz 9 600 8 6V,4.5V,4V,3.5V 7 Capacitance (pf) ID - Drain Current (A) 0.2 3V 2.5V 6 5 4 2V 3 Ciss 500 400 300 200 2 Coss 100 1 0 Crss 0 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AMA520C_1B Analog Power AMA520C Typical Electrical Characteristics - N-channel 8 2 7 ID = 3.6A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = 10V 6 5 4 3 2 1.5 1 1 0 0.5 0 2 4 6 8 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 0.01 0.1 1 10 25 20 15 10 5 0 0.001 100 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA RθJA = 85°C /W P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AMA520C_1B Analog Power AMA520C Typical Electrical Characteristics - P-channel 10 0.25 TJ = 25°C 8 0.2 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 9 2.5V 0.15 3V 3.5V 4V 0.1 4.5V, 6V 7 6 5 4 3 2 0.05 1 0 0 0 2 4 6 ID-Drain Current (A) 8 0 10 1 3 4 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.4 TJ = 25°C 0.35 TJ = 25°C ID = -3.6A IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.3 0.25 0.2 0.15 0.1 1 0.1 0.05 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 700 10 F = 1MHz 9 600 6V,4.5V,4V 8 3.5V 3V 7 Capacitance (pf) ID - Drain Current (A) 0.2 2.5V 6 5 4 3 500 Ciss 400 300 200 2 100 1 Coss Crss 0 0 0 0.4 0.8 1.2 1.6 0 2 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AMA520C_1B Analog Power AMA520C Typical Electrical Characteristics - P-channel 8 2 7 ID = -3.6A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = -10V 6 5 4 3 2 1.5 1 1 0 0.5 0 2 4 6 8 10 12 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA RθJA = 85°C /W P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AMA520C_1B Analog Power AMA520C Package Information © Preliminary 7 Publication Order Number: DS_AMA520C_1B