UNISONIC TECHNOLOGIES CO., LTD
UF7476
Preliminary
POWER MOSFET
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UF7476 is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and minimum on-state resistance.
The UTC UF7476 is suitable for various applications such as
power management for Netcom, computing and portable
applications, etc.
SOP-8
FEATURES
* RDS(ON) < 8.0mΩ @ VGS=4.5V
* Ultra-low gate impedance
* High switching speed
ORDERING INFORMATION
Ordering Number
Note:
UF7476G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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S
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S
Pin Assignment
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S G D D
7
D
8
D
Packing
Tape Reel
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UF7476
MARKING
PIN CONFIGURATION
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
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POWER MOSFET
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UF7476
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
12
V
±12
V
TA=25°C
15
A
Continuous
ID
Drain Current
TA=70°C
12
A
Pulsed (Note 1)
IDM
120
A
Avalanche Current (Note 1)
IAR
12
A
Avalanche Energy (Note 3)
EAS
60
mJ
Power Dissipation (Note 4) TA=25°C
PD
2.5
W
Linear Derating Factor
0.02
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Starting TJ = 25°C, L=0.8mH, IAS=12A, RG = 25Ω
4. When mounted on 1 inch square copper board
SYMBOL
VDSS
VGSS
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (Note 4)
SYMBOL
θJA
RATINGS
75
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
(Note)
Gate Threshold Voltage
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
Output Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
ID=250µA, VGS=0V
IGSS
RDS(ON)
VGS(TH)
CISS
COSS
CRSS
QG
QGS
QGD
QOSS
tD(ON)
tR
tD(OFF)
tF
TYP
VGS=4.5V, ID=15A
VGS=2.8V, ID=12A
VDS=VGS, ID=250µA
VGS=0V, VDS=6.0V, f=1.0MHz
ID=12A, VDS=10V, VGS=4.5V
VDS=5.0V, VGS=0V
VDD=6.0V, ID=12A, RG=1.8Ω
VGS=4.5V (Note)
MAX
12
UNIT
V
0.014
VDS=9.6V, VGS=0V
VDS=9.6V, VGS=0V, TJ=125°C
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
IDSS
Forward
Reverse
TEST CONDITIONS
6.0
12
0.6
V/°C
100
250
200
-200
µA
µA
nA
nA
8.0
30
1.9
mΩ
mΩ
V
2550
2190
450
26
4.6
11
17
11
29
19
8.3
pF
pF
pF
40
nC
nC
nC
nC
ns
ns
ns
ns
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Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
MOSFET symbol showing the
Maximum Body Diode Continuous
IS
integral reverse p-n junction
Source Current
diode.
Maximum Body Diode Pulsed Current
(Note 1)
Drain-Source Diode Forward Voltage
(Note)
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: Pulse width ≤ 300µs, Duty cycle ≤ 2%
TYP
ISM
VSD
tRR
QRR
tRR
QRR
TJ=25°C, IS=12A, VGS=0V
TJ=125°C, IS=12A, VGS=0V
TJ=25°C, IF=12A, VR=12V,
di/dt=100A/µs (Note)
TJ=125°C, IF=12A, VR=12V,
di/dt=100A/µs (Note)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
0.87
0.73
55
59
54
60
MAX
UNIT
2.5
A
120
A
1.2
V
V
ns
nC
ns
nC
82
89
81
90
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Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VDS
VGS
10V
10%
VGS
DUT
td(ON)
tR
td(OFF) tF
tON
tOFF
Resistive Switching Waveforms
Resistive Switching Test Circuit
VDS
RG
BVDSS
ID
L
IAS
ID(t)
10V
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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UF7476
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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