UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and high speed switching applications. FEATURES * RDS(ON) < 9.0mΩ @ VGS= -10V, ID= -30A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT120P06L-TA3-T UTT120P06G-TA3-T UTT120P06L-TQ2-T UTT120P06G-TQ2-T UTT120P06L-TQ2-R UTT120P06G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-728.c UTT120P06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -60 V ±20 V TC=25°C -120 A ID Continuous Drain Current TC=125°C -95 A -480 A Pulsed IDM Single Pulsed Avalanche Energy L=-0.1mH EAS 281 (Note 2) mJ TO-220 192 Power Dissipation PD W TO-263 178 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Duty cycle≦1%. SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA TO-220 TO-263 Junction to Case θJC RATINGS 62 0.65 0.70 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=-250µA, VGS=0V VDS=-60V, VGS=0V VDS=-60V,VGS=0V,TC=125°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=-48V, VGS=-10V, ID=-80A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=-30V, VGS=-10V, ID=-0.5A, Rise Time tR RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=-120A, VGS=0V Body Diode Reverse Recovery Time trr IF=-85A, dIF/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse test, pulse width≦300µS, duty cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -60 -2.0 -1 -50 +100 -100 V µA µA nA nA -4.0 9.0 V mΩ 12000 790 650 pF pF pF 120 30 70 230 300 2600 650 nC nC nC ns ns ns ns -1.0 65 0.14 -120 -480 -1.5 100 0.32 A A V ns nC 2 of 3 QW-R502-728.c UTT120P06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-728.c