UNISONIC TECHNOLOGIES CO., LTD 25N20 Power MOSFET 25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N20 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage. FEATURES * RDS(ON) < 160 mΩ @ VGS =10V, ID =16A * Single Drive Requirement * Low Gate Charge * RoHS Compliant SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 25N20L-TF3-T 25N20G-TF3-T 25N20L-TF1-T 25N20G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-A84.D 25N20 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 200 V Gate Source Voltage VGSS ±20 V Continuous Drain Current TC =25°C ID 25 A (VGS=10V) ID 15.86 A TC = 100°C Pulsed Drain Current (Note 2) IDM 80 A Total Power Dissipation PD 50 W (TC =25°C) Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by max. junction temperature. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current SYMBOL BVDSS TEST CONDITIONS VGS =0V, ID =250µA MIN 200 ∆BVDSS/∆TJ Reference to 25°C , ID =1mA IDSS TYP MAX UNIT V 0.14 VDS =100V, VGS =0V, TJ=25°C VDS =80V, VGS =0V,TJ =150°C VGS =±20V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250µA Static Drain-Source On-Resistance (Note) RDS(ON) VGS =10V, ID =16A Forward Transconductance gFS VDS =10V, ID =16A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time1 tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.5A, RG=25mΩ, VGS=10V, RD=3.125Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge (Note) QG VGS=10V, VDS=50V, ID=1.3A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =25A, VGS =0V Reverse Recovery Time tRR IS =25A,VGS =0V, dI/dt=100A/µs Reverse Recovery Charge QRR V/°C 1 100 ±100 µA µA nA 4 160 V mΩ S 1000 1700 240 25 pF pF pF 56 75 240 100 35 8 9.7 ns ns ns ns nC nC nC 2 112 14 40 1.3 90 380 V ns nC Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-A84.D 25N20 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-A84.D 25N20 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R502-A84.D 25N20 TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Power MOSFET 200 150 100 200 150 100 50 50 0 0 0 2 4 5 1 3 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 40 80 120 160 200 240 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-A84.D