UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.4Ω @VGS = 10 V, ID = 3 A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N65KL-TF3-T 6N65KG-TF3-T 6N65KL-TF1-T 6N65KG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-069.a 6N65K-MTQ Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6 A Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 20 A 160 Single Pulsed (Note 3) EAS mJ Avalanche Energy Repetitive (Note 2) EAR 10 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature TJ +150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=8mH, IAS=6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATING 62.5 3.47 UNIT °C/W °C/W 2 of 6 QW-R205-069.a 6N65K-MTQ Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse Breakdown Voltage Temperature Coefficient IGSS △BVDSS/△T J TEST CONDITIONS VGS =0V, ID = 250μA VDS =650V, VGS = 0V VGS =30V, VDS = 0V VGS =-30V, VDS = 0V www.unisonic.com.tw 650 1 100 -100 ID =250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 3A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 30V, ID =0.5A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS = 50 V, ID = 1.3A, Gate-Source Charge QGS VGS = 10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT 0.6 2.5 V μA nA V/°C 4.5 2.4 V Ω 475 670 65 72 6.5 8.5 pF pF pF 50 60 42 60 180 210 56 100 18 23 6.4 4 ns ns ns ns nC nC nC 1.6 1.4 V 6 A 24 A 3 of 6 QW-R205-069.a 6N65K-MTQ Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R205-069.a 6N65K-MTQ Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R205-069.a 6N65K-MTQ Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-069.a