KSM13N50 500V N-channel MOSFET KERSMI ELECTRONIC CO.,LTD. Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 500V 1) 2) 3) 4) RDSON ID 0.52Ω 13A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 12.5 Continuous Drain Current-T=100℃ 7.9 Pulsed Drain Current2 50 EAS Single Pulse Avalanche Energy3 17 PD Power Dissipation4 170 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM13N50 KERSMI ELECTRONIC CO.,LTD. Symbol Parameter Ratings RƟJC Thermal Resistance,Junction to Case1 0.74 RƟJA Thermal Resistance,Junction to Ambient1 0.5 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM13N50 KSM13N50 TO-220 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 500 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 3.0 — 5.0 V VDS=10V,ID=6A — 0.33 0.52 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 10 — — 1800 2300 — 245 320 — 25 35 — 40 90 — 140 290 — 100 210 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 85 180 Qg Total Gate Charge — 45 60 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 11 — Qgd Gate-Drain “Miller” Charge ID=6A — 22 — ns ns ns ns nC nC nC — — 1.4 V — 290 — ns — 2.6 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM13N50 KERSMI ELECTRONIC CO.,LTD. Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by, pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max .rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. Transfer Characteristics Figure 4. On-Resistance Variation vs Drain Current and Gate Voltage www.kersemi.com 3 KSM13N50 KERSMI ELECTRONIC CO.,LTD. Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4