KSMN4488 KERSMI ELECTRONIC CO.,LTD. 150V N-channel MOSFET Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 150V RDSON ID 0.05Ω 5.0A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 3.5 Continuous Drain Current-T=100℃ 2.8 Pulsed Drain Current2 50 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 1.56 TJ, TSTG Operating and Storage Junction Temperature -55 to ID Range 150 A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMN4488 KERSMI ELECTRONIC CO.,LTD. 150V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 80 RƟJA Thermal Resistance, Junction to Ambient1 21 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMN4488 KSM4488 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 150 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — — V VDS=10V,ID=6A — 0.041 0.05 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 18 — — — — — — — — — — — 12 18 — 7 11 — 22 33 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 10 15 Qg Total Gate Charge — 30 36 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 8.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 8.5 — ns ns ns ns nC nC nC — 0.75 1.1 V — 40 70 ns — — — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMN4488 KERSMI ELECTRONIC CO.,LTD. 150V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1.On-Resistance vs. Drain Current Figure3.Gate Charge Figure 2. Capacitance Figure4.On-Resistance vs. Junction Temperature www.kersemi.com 3 KSMN4488 KERSMI ELECTRONIC CO.,LTD. 150V Figure 5:Source-Drain Diode Forward Voltage N-channel MOSFET Figure 6: On-Resistance vs. Gate-to-Source Voltage Figure 7: Threshold Voltage Figure 8.Avalanche Current vs. Time Figure 9: Normalized Maximum Transient Thermal Impedance www.kersemi.com 4