DISCRETE SEMICONDUCTORS DATA SHEET BSR19; BSR19A NPN high voltage transistors Product data sheet Supersedes data of 2004 Jan 13 2004 Mar 15 NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A FEATURES PINNING • Low current (max. 300 mA) PIN • High voltage (max. 160 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • General purpose switching and amplification • Especially used for telephony applications. DESCRIPTION handbook, halfpage NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BSR20 and BSR20A. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER BSR19 56* or U35 BSR19A 57* or U36 1 Top view 2 2 MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BSR19 − plastic surface mounted package; 3 leads SOT23 BSR19A − plastic surface mounted package; 3 leads SOT23 2004 Mar 15 2 NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BSR19 − 160 V BSR19A − 180 V BSR19 − 140 V BSR19A − 160 V − 600 mA − 250 mW BSR19 60 − BSR19A 80 − 100 300 collector-emitter voltage open base ICM peak collector current Ptot total power dissipation Tamb ≤ 25 °C hFE DC current gain IC = 10 mA; VCE = 5 V fT MIN. transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz MHz LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − 160 V − 180 V BSR19 − 140 V BSR19A − 160 V BSR19 BSR19A VCEO MIN. collector-emitter voltage open base VEBO emitter-base voltage − 6 V IC collector current (DC) − 300 mA ICM peak collector current − 600 mA IB base current (DC) − 100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Mar 15 3 VALUE UNIT 500 K/W NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER MIN. MAX. UNIT collector cut-off current IE = 0 A; VCB = 100 V − 100 nA IE = 0 A; VCB = 100 V; Tamb = 100 °C − 100 µA IE = 0 A; VCB = 120 V − 50 nA IE = 0 A; VCB = 120 V; Tamb = 100 °C − 50 µA − 50 nA 60 − 80 − BSR19 60 250 BSR19A 80 250 BSR19 20 − BSR19A 30 − − 150 mV − 250 mV BSR19 ICBO CONDITIONS collector cut-off current BSR19A IEBO emitter cut-off current IC = 0 A; VEB = 4 V hFE DC current gain IC = 1 mA; VCE = 5 V BSR19 BSR19A DC current gain DC current gain IC = 10 mA; VCE = 5 V IC = 50 mA; VCE = 5 V VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA BSR19 − 200 mV Cc collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz − 6 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz BSR19A 2004 Mar 15 4 NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A MGD814 160 handbook, full pagewidth hFE 120 VCE = 5 V 80 40 0 10−1 1 10 102 103 IC mA Fig.2 DC current gain; typical values. 2004 Mar 15 5 NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Mar 15 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 6 NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Mar 15 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp8 Date of release: 2004 Mar 15 Document order number: 9397 750 12911