DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BSR20; BSR20A PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 21 Philips Semiconductors Product specification PNP high-voltage transistors BSR20; BSR20A PINNING FEATURES • Low current (max. 300 mA) PIN • High voltage (max. 150 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • General purpose switching and amplification • Telephony applications. handbook, halfpage 3 3 DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complements: BSR19 and BSR19A. 1 2 1 MARKING TYPE NUMBER Top view MARKING CODE BSR20 T35 BSR20A T36 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS UNIT BSR20 − −130 V BSR20A − −160 V BSR20 − −120 V BSR20A − −150 V − −600 mA − 250 mW BSR20 40 180 BSR20A 60 240 100 − collector-emitter voltage open base peak collector current Ptot total power dissipation Tamb ≤ 25 °C hFE DC current gain IC = −10 mA; VCE = −5 V 1997 Apr 21 MAX. open emitter ICM fT MIN. transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 2 MHz Philips Semiconductors Product specification PNP high-voltage transistors BSR20; BSR20A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER CONDITIONS collector-base voltage MIN. MAX. UNIT open emitter BSR20 − −130 V BSR20A − −160 V BSR20 − −120 V BSR20A − −150 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − −300 mA ICM peak collector current − −600 mA IB base current − −100 mA Ptot total power dissipation − 250 mW Tstg storage temperature Tamb ≤ 25 °C −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Apr 21 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification PNP high-voltage transistors BSR20; BSR20A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER UNIT IE = 0; VCB = −100 V − −100 nA IE = 0; VCB = −100 V; Tamb = 100 °C − −100 µA IE = 0; VCB = −120 V − −50 nA IE = 0; VCB = −120 V; Tamb = 100 °C − −50 µA − −50 nA BSR20 30 − BSR20A 50 − BSR20 40 180 BSR20A 60 240 BSR20 40 − BSR20A 50 − − −200 IEBO emitter cut-off current IC = 0; VEB = −4 V hFE DC current gain IC = −1 mA; VCE = −5 V hFE MAX. collector cut-off current BSR20A hFE MIN. collector cut-off current BSR20 ICBO CONDITIONS DC current gain DC current gain IC = −10 mA; VCE = −5 V IC = −50 mA; VCE = −5 V VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA − −500 mV Cc collector capacitance I E = 0; VCB = −10 V; f = 1 MHz − 6 pF fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz BSR20 BSR20A 1997 Apr 21 4 mV 100 400 MHz 100 300 MHz Philips Semiconductors Product specification PNP high-voltage transistors BSR20; BSR20A MGD813 200 handbook, full pagewidth hFE 150 VCE = −5 V 100 50 0 −10−1 −1 −10 −102 −103 IC mA Fig.2 DC current gain; typical values. 1997 Apr 21 5 Philips Semiconductors Product specification PNP high-voltage transistors BSR20; BSR20A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1997 Apr 21 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PNP high-voltage transistors BSR20; BSR20A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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