DISCRETE SEMICONDUCTORS DATA SHEET PMST3904 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 22 2004 Jan 21 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 FEATURES QUICK REFERENCE DATA • Collector current capability IC = 200 mA SYMBOL • Collector-emitter voltage VCEO = 40 V. PARAMETER MAX. UNIT VCEO collector-emitter voltage 40 V IC collector current (DC) 200 mA APPLICATIONS • General amplification and switching. PINNING PIN DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST3906. DESCRIPTION 1 base 2 emitter 3 collector MARKING TYPE NUMBER 3 handbook, halfpage MARKING CODE(1) 3 ∗1A PMST3904 Note 1 1. ∗ = p: Made in Hong Kong. 2 ∗ = t: Made in Malaysia. 1 ∗ = W: Made in China. Top view 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMST3904 − 2004 Jan 21 DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT323 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 200 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 21 3 VALUE UNIT 625 K/W NXP Semiconductors Product data sheet NPN switching transistor PMST3904 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; see Fig.2; note 1 IC = 0.1 mA 60 − IC = 1 mA 80 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = Ic = 0; VBE = 500 mV; f = 1 MHz − 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 5 dB − 35 ns Switching times (between 10% and 90% levels); see Fig.7 td delay time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA tr rise time − 35 ns ts storage time − 200 ns tf fall time − 50 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Jan 21 4 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 MGU822 MGU821 500 250 handbook, halfpage handbook, halfpage IC (mA) h FE 400 (1) (2) (3) (4) (5) (6) (7) 200 (1) 300 150 (8) (9) (2) 200 100 (10) (3) 100 50 0 10 −1 1 10 102 I C (mA) 0 103 0 2 4 6 8 10 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (5) IB = 3 mA. (6) IB = 2.5 mA. (7) IB = 2 mA. (8) IB = 1.5 mA. IB = 5 mA. IB = 4.5 mA. IB = 4 mA. IB = 3.5 mA. Fig.3 Fig.2 DC current gain; typical values. (9) IB = 1 mA. (10) IB = 0.5 mA. Collector current as a function of collector-emitter voltage. MGU823 1200 MGU824 1200 handbook, halfpage handbook, halfpage VBEsat VBE (mV) 1000 (mV) 1000 (1) (1) 800 800 (2) 600 (3) (2) 600 (3) 400 400 200 10 −1 1 10 102 I C (mA) 200 10 −1 103 VCE = 1 V. (1) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Base-emitter voltage as a function of collector current. 2004 Jan 21 5 1 10 102 I C (mA) Base-emitter saturation voltage as a function of collector current. 103 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 MGU825 103 handbook, halfpage VCEsat (mV) (1) (2) (3) 102 10 10 −1 1 10 102 I C (mA) 103 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = −1.9 V; VCC = 3 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.7 Test circuit for switching times. 2004 Jan 21 6 oscilloscope NXP Semiconductors Product data sheet NPN switching transistor PMST3904 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2004 Jan 21 REFERENCES IEC JEDEC JEITA SC-70 7 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet NPN switching transistor PMST3904 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 21 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp9 Date of release: 2004 Jan 21 Document order number: 9397 750 12537