ETC PMST2222/A

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST2222; PMST2222A
NPN switching transistors
Product specification
File under Discrete Semiconductors, SC04
1997 Jul 14
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• High-speed switching and linear amplification.
DESCRIPTION
3
handbook, halfpage
3
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST2907A.
1
MARKING
2
TYPE NUMBER
1
MARKING CODE
PMST2222
t1B
PMST2222A
t1P
2
Top view
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
PMST2222
−
60
V
PMST2222A
−
75
V
PMST2222
−
30
V
PMST2222A
−
40
V
−
600
mA
mW
collector-emitter voltage
IC
collector current (DC)
open base
Ptot
total power dissipation
Tamb ≤ 25 °C
−
200
hFE
DC current gain
IC = 150 mA; VCE = 10 V
100
300
fT
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz
PMST2222
250
−
MHz
PMST2222A
300
−
MHz
−
250
ns
toff
1997 Jul 14
turn-off time
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA
2
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
UNIT
−
60
V
−
75
V
PMST2222
−
30
V
PMST2222A
−
40
V
PMST2222
−
5
V
PMST2222A
−
6
V
PMST2222A
VEBO
MAX.
open emitter
PMST2222
VCEO
MIN.
collector-emitter voltage
emitter-base voltage
open base
open collector
IC
collector current (DC)
−
600
mA
ICM
peak collector current
−
800
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jul 14
3
VALUE
UNIT
625
K/W
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
MIN.
MAX.
IE = 0; VCB = 50 V
−
10
nA
IE = 0; VCB = 50 V; Tj = 125 °C
−
10
µA
IE = 0; VCB = 60 V
−
10
nA
IE = 0; VCB = 60 V; Tj = 125 °C
−
10
µA
nA
collector cut-off current
PMST2222A
IEBO
collector cut-off current
IC = 0; VEB = 3 V
−
10
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
35
−
IC = 1 mA; VCE = 10 V
50
−
IC = 10 mA; VCE = 10 V
75
−
hFE
VCEsat
IC = 10 mA; VCE = 10 V; Tamb = −55 °C
35
−
IC = 150 mA; VCE = 1 V; note 1
50
−
IC = 150 mA; VCE = 10 V; note 1
100
300
PMST2222
30
−
PMST2222A
40
−
IC = 150 mA; IB = 15 mA; note 1
−
400
mV
IC = 500 mA; IB = 50 mA; note 1
−
1.6
V
IC = 150 mA; IB = 15 mA; note 1
−
300
mV
IC = 500 mA; IB = 50 mA; note 1
−
1
V
IC = 150 mA; IB = 15 mA; note 1
−
1.3
V
IC = 500 mA; IB = 50 mA; note 1
−
2.6
V
DC current gain
collector-emitter saturation voltage
PMST2222A
VBEsat
base-emitter saturation voltage
PMST2222
VBEsat
IC = 500 mA; VCE = 10 V; note 1
collector-emitter saturation voltage
PMST2222
VCEsat
base-emitter saturation voltage
PMST2222A
IC = 150 mA; IB = 15 mA; note 1
0.6
1.2
V
IC = 500 mA; IB = 50 mA; note 1
−
2
V
−
8
pF
PMST2222
−
30
pF
PMST2222A
−
25
pF
PMST2222
250
−
MHz
PMST2222A
300
−
MHz
−
4
dB
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
fT
F
1997 Jul 14
UNIT
collector cut-off current
PMST2222
ICBO
CONDITIONS
transition frequency
noise figure
IC = 20 mA; VCE = 20 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
4
Philips Semiconductors
Product specification
NPN switching transistors
SYMBOL
PMST2222; PMST2222A
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Switching times (between 10% and 90% levels); see Fig.2
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA −
35
ns
delay time
−
15
ns
tr
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
ton
turn-on time
td
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
VBB
ndbook, full pagewidth
VCC
RB
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Jul 14
5
oscilloscope
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1997 Jul 14
REFERENCES
IEC
JEDEC
EIAJ
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 14
7
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© Philips Electronics N.V. 1997
SCA55
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117047/00/01/pp8
Date of release: 1997 Jul 14
Document order number:
9397 750 02635