KSM9530 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFETS Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON -100V 0.3Ω ID -12A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -12 Continuous Drain Current-T=100℃ -8.2 Pulsed Drain Current2 -48 EAS Single Pulse Avalanche Energy3 400 PD Power Dissipation4 88 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM9530 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFETS Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 62 RƟJA Thermal Resistance, Junction to Ambient1 1.7 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM9530 KSM9530 TO-220 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -100 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — — 0.3 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 3.7 — — — 860 — — 340 — — 93 — — 12 — — 52 — — 31 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 39 — Qg Total Gate Charge — — 38 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 6.8 Qgd Gate-Drain “Miller” Charge ID=6A — — 21 ns ns ns ns nC nC nC — — -6.3 V — 120 240 ns — 0.46 0.92 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM9530 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFETS Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig. 1 Typical Output Characteristics, TC = 25 ° Fig. 2 Typical Transfer Characteristics Fig. 3 Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 KSM9530 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFETS Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4