KSMB530 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 100V 1) 2) 3) 4) RDSON ID 0.16Ω 14A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 14 Continuous Drain Current-T=100℃ 10 Pulsed Drain Current2 56 EAS Single Pulse Avalanche Energy3 69 PD Power Dissipation4 88 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMB530 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 62 RƟJA Thermal Resistance, Junction to Ambient1 1.7 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMB530 KSM530 TO-263 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — — 0.16 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 5.1 — — — 670 — — 250 — — 60 — — 10 — — 34 — — 23 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 24 — Qg Total Gate Charge — — 26 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 5.5 Qgd Gate-Drain “Miller” Charge ID=6A — — 11 ns ns ns ns nC nC nC — — 2.5 V — 150 280 ns — 0.85 1.7 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMB530 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig. 1 Typical Output Characteristics, TC = 25 ° Fig. 2 Typical Transfer Characteristics Fig. 3 Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 KSMB530 KERSMI ELECTRONIC CO.,LTD. 100V Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage N-channel MOSFET Fig. 6 - Typical Source-Drain Diode Forward Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4