MCR100-500R KERSMI ELECTRONIC CO.,LTD. 500V Description This MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS ID 500V 7.5A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Thermal Characteristics Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 — RƟJA Thermal Resistance, Junction to Ambient1 60 Units K/W Package Marking and Ordering Information Part NO. Marking Package BT151-500R BT151-500T TO-220 www.kersemi.com 1 MCR100-500R KERSMI ELECTRONIC CO.,LTD. 500V Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted www.kersemi.com 2 MCR100-500R KERSMI ELECTRONIC CO.,LTD. 500V www.kersemi.com 3 MCR100-500R KERSMI ELECTRONIC CO.,LTD. 500V www.kersemi.com 4