BT151-500R SCR, 12 A, 15mA, 500 V, SOT78 Rev. 05 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability High thermal cycling performance High surge current capability 1.3 Applications Ignition circuits Protection Circuits Motor control Static switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VDRM repetitive peak off-state voltage IT(AV) average on-state current IT(RMS) RMS on-state current Conditions Min Typ Max Unit - - 500 V half sine wave; Tmb ≤ 109 °C; see Figure 3 - - 7.5 A half sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 - - 12 A VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 - 2 15 mA Static characteristics IGT gate trigger current BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode 3 G gate mb mb anode Simplified outline mb Graphic symbol A K G sym037 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-500R TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 2 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 500 V VRRM repetitive peak reverse voltage - 500 V IT(AV) average on-state current half sine wave; Tmb ≤ 109 °C; see Figure 3 - 7.5 A IT(RMS) RMS on-state current half sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 - 12 A dIT/dt rate of rise of on-state current IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs - 50 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C ITSM non-repetitive peak on-state current half sine wave; tp = 8.3 ms; Tj(init) = 25 °C - 132 A half sine wave; tp = 10 ms; Tj(init) = 25 °C; see Figure 4; see Figure 5 - 120 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 72 A2s PG(AV) average gate power over any 20 ms period - 0.5 W VRGM peak reverse gate voltage - 5 V 001aaa954 25 IT(RMS) (A) 20 001aaa999 16 IT(RMS) (A) 12 15 8 10 4 5 0 10−2 10−1 0 −50 1 10 surge duration (s) Fig 2. Fig 1. 0 50 100 150 Tmb (°C) RMS on-state current as a function of mounting base temperature; maximum values RMS on-state current as a function of surge duration; maximum values BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 3 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 003aab830 15 Ptot (W) a = 1.57 1.9 2.2 10 2.8 4 5 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α 0 0 2 4 6 8 IT(AV) (A) Fig 3. Total power dissipation as a function of average on-state current; maximum values 001aaa956 103 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 10−2 tp (s) Fig 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 4 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 003aab829 160 ITSM (A) 120 80 IT ITSM 40 t tp Tj initial = 25 °C max 0 Fig 5. 102 10 1 103 number of cycles Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 6 junction to mounting base - - 1.3 K/W thermal resistance from junction to ambient free air - 60 - K/W 001aaa962 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp T 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 5 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 - 2 15 mA IL latching current VD = 12 V; Tj = 25 °C; see Figure 9 - 10 40 mA IH holding current VD = 12 V; Tj = 25 °C; see Figure 10 - 7 20 mA VT on-state voltage IT = 23 A; Tj = 25 °C; see Figure 11 - 1.4 1.75 V VGT gate trigger voltage IT = 100 mA; VD = 12 V; Tj = 25 °C; see Figure 12 - 0.6 1.5 V IT = 100 mA; VD = 500 V; Tj = 125 °C 0.25 0.4 - V ID off-state current VD = 500 V; Tj = 125 °C - 0.1 0.5 mA IR reverse current VR = 500 V; Tj = 125 °C - 0.1 0.5 mA VDM = 335 V; Tj = 125 °C; exponential waveform; gate open circuit 50 130 - V/µs VDM = 335 V; Tj = 125 °C; RGK = 100 Ω; exponential waveform; see Figure 7 200 1000 - V/µs Dynamic characteristics dVD/dt rate of rise of off-state voltage tgt gate-controlled turn-on time ITM = 40 A; VD = 500 V; IG = 100 mA; dIG/dt = 5 A/µs; Tj = 25 °C - 2 - µs tq commutated turn-off time VDM = 335 V; Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω - 70 - µs 001aaa949 104 001aaa952 3 IGT IGT(25°C) dVD/dt (V/μs) (1) 103 2 (2) 102 1 0 −50 10 0 50 100 150 Tj (°C) Fig 8. Fig 7. 0 50 100 150 Tj (°C) Normalized gate trigger current as a function of junction temperature Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 6 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 001aaa951 3 IL IL(25°C) IH IH(25°C) 2 2 1 1 0 −50 Fig 9. 0 50 100 150 Tj (°C) Normalized latching current as a function of junction temperature 001aaa959 30 001aaa950 3 0 −50 0 50 100 150 Tj (°C) Fig 10. Normalized holding current as a function of junction temperature 001aaa953 1.6 VGT VGT(25°C) IT (A) 1.2 20 (1) (2) (3) 0.8 10 0 0 0.5 1 1.5 2 VT (V) 0.4 −50 0 50 100 150 Tj (°C) Fig 12. Normalized gate trigger voltage as a function of junction temperature Fig 11. On-state current as a function of on-state voltage BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 7 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 13. Package outline SOT78 (TO-220AB) BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 8 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BT151-500R_5 20090302 Product data sheet - BT151_SER_L_R_4 Modifications: • • Package outline updated. Type number BT151-500R separated from data sheet BT151_SER_L_R_4. BT151_SER_L_R_4 20061023 Product data sheet - BT151_SERIES_3 BT151_SERIES_3 (9397 750 13159) 20040607 Product specification - BT151_SERIES_2 BT151_SERIES_2 19990601 Product specification - BT151_SERIES_1 BT151_SERIES_1 19970901 Product specification - - BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 9 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BT151-500R_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 2 March 2009 10 of 11 BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 March 2009 Document identifier: BT151-500R_5