Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
BC859W; BC860W
PNP general purpose transistors
Product data sheet
Supersedes data of 1997 Sep 03
1999 Apr 12
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
3
handbook, halfpage
3
MARKING
TYPE
NUMBER
1
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
2
BC859W
4D∗
BC860W
4H∗
1
BC859BW
4B∗
BC860BW
4F∗
Top view
BC859CW
4C∗
BC860CW
4G∗
2
MAM048
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC859W
−
−30
V
BC860W
−
−50
V
BC859W
−
−30
V
BC860W
−
−45
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = −30 V
−
−
−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
−4
μA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
hFE
DC current gain
IC = −2 mA; VCE = −5 V;
see Figs 2 and 3
220
−
800
220
−
475
BC859W; BC860W
BC859BW; BC860BW
420
−
800
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
−
−300
mV
IC = −100 mA; IB = −5 mA; note 1
−
−
−650
mV
base-emitter voltage
IC = −2 mA; VCE = −5 V
600
−
750
mV
IC = −10 mA; VCE = −5 V
−
−
820
mV
BC859CW; BC860CW
VCEsat
VBE
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
10
−
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
100
−
−
MHz
F
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
−
−
4
dB
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
MBH727
400
handbook, full pagewidth
hFE
VCE = −5 V
300
200
100
0
−10−2
−10−1
−1
−10
−102
IC (mA)
−103
BC859BW; BC860BW.
Fig.2 DC current gain; typical values.
MBH728
600
handbook, full pagewidth
hFE
500
VCE = −5 V
400
300
200
100
0
−10−2
−10−1
−1
−10
BC859CW; BC860CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
−102
IC (mA)
−103
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 12
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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consequences of use of such information.
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specifications and product descriptions, at any time and
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 12
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
115002/00/04/pp7
Date of release: 1999 Apr 12
Document order number: 9397 750 05583