TYSEMI BC859BW

Transistors
IC
SMD Type
BC859W,BC860W
Features
Low current (max. 100 mA).
Low voltage (max. 45 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
BC859W
BC860W
Unit
Collector-base voltage
Parameter
VCBO
-30
-50
V
Collector-emitter voltage
VCEO
-30
-45
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
200
mW
Tj
150
Storage temperature
Tstg
-65 to +150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
Junction temperature
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K/W
4008-318-123
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Transistors
IC
SMD Type
BC859W,BC860W
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Max
Unit
ICBO
IE = 0; VCB = -30 V
Testconditons
Min
-15
nA
ICBO
IE = 0; VCB = -30 V; Tj = 150
-4
ìA
IEBO
IC = 0; VEB = -5 V
-100
nA
BC859W; BC860W
DC current gain
hFE
BC859BW; BC860BW
IC = -2 mA; VCE = -5 V;
BC859CW; BC860CW
Collector-emitter saturation voltage
VCE(sat)
Typ
220
800
220
475
420
800
IC = -10 mA; IB = -0.5 mA
-300
mV
IC = -100 mA; IB = -5 mA;
-650
mV
750
mV
820
mV
5
pF
IC = -2 mA; VCE = -5 V
600
Base-emitter voltage *2
VBE
Collector capacitance
CC
IE = ie = 0; VCB = -10 V; f = 1 MHz
Emitter capacitance
Ce
IC = ic = 0; VEB = -500 mV; f = 1 MHz
Transition frequency
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz
IC = -10 mA; VCE = -5 V
Noise figure
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
NF
10
pF
100
MHz
IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;f
= 10 Hz to 15.7 kHz
4
IC=-200 ìA; VCE = -5 V; RS = 2 kÙ;f =
1 kHz; B = 200 Hz
4
dB
*1. VBEsat decreases by about -1.7 mV/K with increasing temperature.
*2. VBE decreases by about -2 mV/K with increasing temperature.
hFE Classification
TYPE
BC859W
BC859BW
BC859CW
Marking
4D
4B
4C
TYPE
BC860W
BC860BW
BC860CW
Marking
4H
4F
4G
http://www.twtysemi.com
[email protected]
4008-318-123
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