Data Sheet

SO
T3
23
PDTB1xxxU series
500 mA, 50 V PNP resistor-equipped transistors
Rev. 1 — 6 May 2014
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Type number
PDTB113EU
Package
NXP
JEITA
JEDEC
NPN
complement
SOT323
SC-70
-
PDTD113EU
PDTB113ZU
PDTD113ZU
PDTB123EU
PDTD123EU
PDTB123YU
PDTD123YU
PDTB143EU
PDTD143EU
PDTB143XU
PDTD143XU
PDTB114EU
PDTD114EU
Package
configuration
very small
1.2 Features




500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
  10 % resistor ratio tolerance
 AEC-Q101 qualified
 High temperature applications
up to 175 °C
1.3 Applications
 IC inputs control
 Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
 Switching loads
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
50
V
IO
output current
-
-
500
mA
R1
bias resistor 1 (input)
R2
PDTB113EU
1
k
PDTB113ZU
1
k
PDTB123EU
2.2
k
PDTB123YU
2.2
k
PDTB143EU
4.7
k
PDTB143XU
4.7
k
PDTB114EU
10
k
PDTB113EU
1
k
PDTB113ZU
10
k
PDTB123EU
2.2
k
bias resistor 2 (base-emitter)
PDTB123YU
10
k
PDTB143EU
4.7
k
PDTB143XU
10
k
PDTB114EU
10
k
2. Pinning information
Table 3.
Pinning
Pin
Description
1
input (base)
2
GND (emitter)
3
Simplified outline
Graphic symbol
3
3
R1
output (collector)
1
R2
1
2
2
sym003
3. Ordering information
Table 4.
Ordering information
Type number
Package
PDTB1xxxU series
PDTB1XXXU_SER
Product data sheet
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PDTB113EU
ZG*
PDTB113ZU
ZH*
PDTB123EU
ZJ*
PDTB123YU
ZK*
PDTB143EU
ZL*
PDTB143XU
ZM*
PDTB114EU
ZN*
[1]
* = placeholder for manufacturing site code
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
PDTB113EU
VI
IO
PDTB1XXXU_SER
Product data sheet
PDTB113ZU
-
5
V
PDTB123EU
-
10
V
PDTB123YU
-
5
V
PDTB143EU
-
10
V
PDTB143XU
-
7
V
PDTB114EU
-
10
V
PDTB113EU
10
+10
V
PDTB113ZU
10
+5
V
PDTB123EU
12
+10
V
PDTB123YU
12
+5
V
PDTB143EU
30
+10
V
PDTB143XU
30
+7
V
PDTB114EU
50
+10
V
-
500
mA
input voltage
output current
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb  25 C
Min
Max
Unit
[1]
-
300
mW
[2]
-
425
mW
Tj
junction temperature
-
175
C
Tamb
ambient temperature
55
+175
C
Tstg
storage temperature
55
+175
C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
aaa-012426
500
Ptot
(mW)
(1)
400
(2)
300
200
100
0
-75
25
125
225
Tamb (°C)
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, single-sided copper, standard footprint.
Fig 1.
Power derating curves
6. Thermal characteristics
Table 7.
PDTB1XXXU_SER
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from junction
to ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
500
K/W
[2]
-
-
353
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012062
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.2
0.1
0.05
10
0.02
0.01
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical values
aaa-012063
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical values
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Typ
Max
Unit
VCB = 40 V; IE = 0 A
-
-
100
nA
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 50 V; IB = 0 A
current
-
-
0.5
A
IEBO
emitter-base cut-off
current
PDTB113EU
-
-
4.0
mA
PDTB113ZU
-
-
0.8
mA
PDTB123EU
-
-
2.0
mA
PDTB123YU
-
-
0.65
mA
PDTB143EU
-
-
0.9
mA
PDTB143XU
-
-
0.6
mA
PDTB114EU
-
-
0.4
mA
PDTB113EU
33
-
-
PDTB113ZU
70
-
-
PDTB123EU
40
-
-
PDTB123YU
70
-
-
PDTB143EU
60
-
-
PDTB143XU
70
-
-
PDTB114EU
70
-
-
-
-
100
mV
PDTB113EU
0.6
1.0
1.5
V
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 50 mA
DC current gain
VCEsat
collector-emitter
saturation voltage
IC = 50 mA;
IB = 2.5 mA
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 A
VI(on)
Product data sheet
Min
ICBO
hFE
PDTB1XXXU_SER
Conditions
PDTB113ZU
0.3
0.6
1.0
V
PDTB123EU
0.6
1.1
1.8
V
PDTB123YU
0.4
0.65
1.0
V
PDTB143EU
0.6
0.9
1.5
V
PDTB143XU
0.5
0.75
1.1
V
PDTB114EU
0.6
1.0
1.5
V
PDTB113EU
1.0
1.4
1.8
V
on-state input voltage
VCE = 0.3 V; IC = 20 mA
PDTB113ZU
0.4
0.8
1.4
V
PDTB123EU
1.0
1.5
2.0
V
PDTB123YU
0.5
1.0
1.4
V
PDTB143EU
1.0
1.7
2.2
V
PDTB143XU
1.0
1.4
2.0
V
PDTB114EU
1.0
2.2
3.0
V
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
Table 8.
Characteristics …continued
Tamb = 25 C unless otherwise specified.
Symbol Parameter
R1
Product data sheet
Min
Typ
Max
Unit
PDTB113EU
0.7
1.0
1.3
k
PDTB113ZU
0.7
1.0
1.3
k
PDTB123EU
1.54
2.2
2.86
k
PDTB123YU
1.54
2.2
2.86
k
PDTB143EU
3.3
4.7
6.1
k
PDTB143XU
3.3
4.7
6.1
k
PDTB114EU
7.0
10
13
k
PDTB113EU
0.9
1.0
1.1
PDTB113ZU
9.0
10
11
PDTB123EU
0.9
1.0
1.1
PDTB123YU
4.1
4.55
5.0
PDTB143EU
0.9
1
1.1
PDTB143XU
1.91
2.13
2.34
PDTB114EU
0.9
1.0
1.1
-
11
-
pF
-
140
-
MHz
bias resistor 1 (input)
R2/R1
PDTB1XXXU_SER
Conditions
bias resistor ratio
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A; f = 1 MHz
fT
transition frequency
VCE = 5 V;
IC = 50 mA; 
f = 100 MHz
[1]
Characteristics of built-in transistor.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
[1]
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
006aaa345
103
006aaa346
−10−1
(1)
(1)
hFE
(2)
(2)
(3)
102
VCEsat
(V)
(3)
10
1
10−1
−10−1
−1
−10
−102
IC (mA)
−103
−10−2
−10
VCE = 5 V
−102
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
PDTB113EU: DC current gain as a function of
collector current; typical values
006aaa347
−10
VI(on)
(V)
Fig 5.
PDTB113EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa348
−10
VI(off)
(V)
(1)
(2)
(1)
(2)
(3)
(3)
−1
−1
−10−1
−10−1
−1
−10
−102
IC (mA)
−103
−10−1
−10−1
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
PDTB113EU: On-state input voltage as a
function of collector current; typical values
PDTB1XXXU_SER
Product data sheet
−1
IC (mA)
−10
VCE = 5 V
(1) Tamb = 40 C
Fig 6.
−103
IC/IB = 20
(2) Tamb = 25 C
Fig 4.
IC (mA)
Fig 7.
PDTB113EU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
8 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012067
-0.5
aaa-012068
40
-3.7
IC
(A)
Cc
(pF)
-3.4
-0.4
-3.1
30
-2.8
-2.5
-0.3
-2.2
20
-1.9
-0.2
-1.6
10
-1.3
-0.1
IB = -1 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
Fig 8.
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
PDTB113EU: Collector current as a function of
collector-emitter voltage; typical values
Fig 9.
PDTB113EU: Collector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 10. PDTB113EU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
9 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
006aaa349
103
006aaa350
−10−1
(1)
hFE
(1)
(2)
(2)
(3)
VCEsat
(V)
(3)
102
10
1
−10−1
−1
−10
−102
IC (mA)
−103
−10−2
VCE = 5 V
−10
−1
−102
IC (mA)
−103
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 11. PDTB113ZU: DC current gain as a function of
collector current; typical values
006aaa351
−10
Fig 12. PDTB113ZU: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa352
−10
VI(off)
(V)
VI(on)
(V)
(1)
(1)
(2)
−1
−10−1
−10−1
−1
(2)
−1
(3)
−10
−102
IC (mA)
−103
(3)
−10−1
−10−1
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
Fig 13. PDTB113ZU: On-state input voltage as a
function of collector current; typical values
Product data sheet
IC (mA)
−10
VCE = 5 V
(1) Tamb = 40 C
PDTB1XXXU_SER
−1
Fig 14. PDTB113ZU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
10 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012069
-0.5
aaa-012070
40
-2.5
IC
(A)
Cc
(pF)
-2.25
-2
-0.4
30
-1.75
-1.5
-0.3
-1.25
20
-1
-0.2
-0.75
10
-0.1
-0.5
IB = -0.25 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Fig 15. PDTB113ZU: Collector current as a function of
collector-emitter voltage; typical values
Fig 16. PDTB113ZU: Collector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 17. PDTB113ZU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
006aaa353
103
aaa-012631
-10-1
(1)
hFE
(1)
(2)
(2)
(3)
VCEsat
(V)
102
(3)
10
1
10−1
−10−1
−1
−10
−102
IC (mA)
−103
-10-2
-10
-102
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 18. PDTB123EU: DC current gain as a function of
collector current; typical values
006aaa355
−10
VI(on)
(V)
-103
IC (mA)
Fig 19. PDTB123EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa356
−10
VI(off)
(V)
(1)
(1)
(2)
(2)
(3)
(3)
−1
−1
−10−1
−10−1
−1
−10
−102
IC (mA)
−103
−10−1
−10−1
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
−10
(3) Tamb = 100 C
Fig 20. PDTB123EU: On-state input voltage as a
function of collector current; typical values
Product data sheet
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
PDTB1XXXU_SER
−1
Fig 21. PDTB123EU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
12 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012626
-0.5
IC
(A)
Cc
(pF)
-2.75
-2.5
-0.4
aaa-012636
40
-3
30
-2.25
-2
-0.3
-1.75
20
-1.5
-0.2
-1.25
-1
10
-0.1
IB = -0.75 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Fig 22. PDTB123EU: Collector current as a function of
collector-emitter voltage; typical values
Fig 23. PDTB123EU: Collector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 24. PDTB123EU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
13 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
006aaa357
103
aaa-012632
-10-1
(1)
hFE
(1)
(2)
(2)
VCEsat
(V)
(3)
(3)
102
10
1
−10−1
−1
−10
−102
IC (mA)
−103
-10-2
-102
-10
-1
-103
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 25. PDTB123YU: DC current gain as a function of
collector current; typical values
006aaa359
−10
Fig 26. PDTB123YU: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa360
−10
VI(on)
(V)
VI(off)
(V)
(1)
(1)
(2)
(2)
(3)
−1
−10−1
−10−1
−1
−1
−10
−102
IC (mA)
−103
(3)
−10−1
−10−1
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
−10
(3) Tamb = 100 C
Fig 27. PDTB123YU: On-state input voltage as a
function of collector current; typical values
Product data sheet
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
PDTB1XXXU_SER
−1
Fig 28. PDTB123YU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
14 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012627
-0.5
IC
(A)
Cc
(pF)
-2.55
-2.3
-0.4
aaa-012637
40
-2.8
30
-2.05
-1.8
-0.3
-1.55
20
-1.3
-1.05
-0.2
-0.8
-0.1
10
IB = -0.55 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Fig 29. PDTB123YU: Collector current as a function of
collector-emitter voltage; typical values
Fig 30. PDTB123YU: Collector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 31. PDTB123YU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
15 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012641
103
aaa-012633
-10-1
(1)
hFE
(1)
102
(2)
VCEsat
(V)
(2)
(3)
(3)
10
1
-10-1
-1
-10
-102
-103
-10-2
-1
-102
-10
IC (mA)
-103
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 32. PDTB143EU: DC current gain as a function of
collector current; typical values
aaa-012644
-102
Fig 33. PDTB143EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
aaa-012647
-10
VI(on)
(V)
VI(off)
(V)
-10
(1)
(1)
(2)
(2)
-1
(3)
(3)
-1
-10-1
-10-1
-1
-10
-102
-103
-10-1
-10-1
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
Fig 34. PDTB143EU: On-state input voltage as a
function of collector current; typical values
Product data sheet
-10
IC (mA)
(1) Tamb = 40 C
PDTB1XXXU_SER
-1
Fig 35. PDTB143EU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
16 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012628
-0.5
IC
(A)
Cc
(pF)
-2.2
-1.95
-0.4
aaa-012638
20
-2.45
16
-1.7
-1.45
-0.3
12
-1.2
-0.95
-0.2
8
-0.7
-0.45
-0.1
4
IB = -0.2 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Fig 36. PDTB143EU: Collector current as a function of
collector-emitter voltage; typical values
Fig 37. PDTB143EU: Collector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 38. PDTB143EU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
17 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012642
103
aaa-012634
-10-1
(1)
hFE
(1)
102
(2)
VCEsat
(V)
(2)
(3)
(3)
10
1
-10-1
-1
-10
-102
-103
-10-2
-1
-102
-10
IC (mA)
-103
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 39. PDTB143XU: DC current gain as a function of
collector current; typical values
aaa-012645
-102
Fig 40. PDTB143XU: Collector-emitter saturation
voltage as a function of collector current;
typical values
aaa-012648
-10
VI(on)
(V)
VI(off)
(V)
-10
(1)
(1)
(2)
-1
(3)
(2)
(3)
-1
-10-1
-10-1
-1
-10
-102
-103
-10-1
-10-1
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
Fig 41. PDTB143XU: On-state input voltage as a
function of collector current; typical values
Product data sheet
-10
IC (mA)
(1) Tamb = 40 C
PDTB1XXXU_SER
-1
Fig 42. PDTB143XU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
18 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012629
-0.5
-2.8
IC
(A)
Cc
(pF)
-2.55
-0.4
aaa-012639
20
16
-2.3
-2.05
-1.8
-0.3
12
-1.55
-1.3
-0.2
8
-1.05
-0.8
-0.1
4
IB = -0.55 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Fig 43. PDTB143XU: Collector current as a function of
collector-emitter voltage; typical values
Fig 44. PDTB143XU: Collector capacitance as a
function of collector-base voltage; typical
values
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 45. PDTB143XU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
19 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012643
103
aaa-012635
-10-1
(1)
hFE
(1)
102
(2)
VCEsat
(V)
(2)
(3)
(3)
10
1
-10-1
-1
-10
-102
-103
-10-2
-1
-102
-10
IC (mA)
-103
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 46. PDTB114EU: DC current gain as a function of
collector current; typical values
aaa-012646
-102
Fig 47. PDTB114EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
aaa-012649
-10
VI(on)
(V)
VI(off)
(V)
-10
(1)
(1)
(2)
(2)
-1
(3)
(3)
-1
-10-1
-10-1
-1
-10
-102
-103
-10-1
-10-1
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
Fig 48. PDTB114EU: On-state input voltage as a
function of collector current; typical values
Product data sheet
-10
IC (mA)
(1) Tamb = 40 C
PDTB1XXXU_SER
-1
Fig 49. PDTB114EU: Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
20 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
aaa-012630
-0.5
-2.8
IC
(A)
Cc
(pF)
-2.55
-0.4
aaa-012640
40
-2.3
30
-2.05
-1.8
-0.3
-1.55
20
-1.3
-0.2
-1.05
-0.8
10
-0.1
IB = -0.55 mA
0
0
0
-1
-2
-3
-4
-5
0
-10
-20
VCE (V)
Tamb = 25 C
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Fig 50. PDTB114EU: Collector current as a function of
collector-emitter voltage; typical values
Fig 51. PDTB114EU: Collector capacitance as a
function of collector-base voltage; typical
values of built-in transistor
aaa-012064
103
fT
(MHz)
102
10
1
-10-1
-1
-10
-102
-103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 52. PDTB114EU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
21 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 53. Package outline PDTB1xxxU series (SOT323/SC-70)
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
22 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
10. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
1
occupied area
0.5
(3×)
Dimensions in mm
0.55
(3×)
sot323_fr
Dimensions in mm
Fig 54. Reflow soldering footprint PDTB1xxxU series (SOT323/SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Dimensions in mm
Fig 55. Wave soldering footprint PDTB1xxxU series (SOT323/SC-70)
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
23 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PDTB1XXXU_SER v.1
20140506
Product data sheet
-
-
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
24 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PDTB1XXXU_SER
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
25 of 27
PDTB1xxxU series
NXP Semiconductors
500 mA, 50 V PNP resistor-equipped transistors
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
26 of 27
NXP Semiconductors
PDTB1xxxU series
500 mA, 50 V PNP resistor-equipped transistors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 22
Quality information . . . . . . . . . . . . . . . . . . . . . 22
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24
Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Contact information. . . . . . . . . . . . . . . . . . . . . 26
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
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Date of release: 6 May 2014
Document identifier: PDTB1XXXU_SER