DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product data sheet Supersedes data of 2003 Nov 04 2004 Apr 07 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6 FEATURES DESCRIPTION • Built-in bias resistors NPN/PNP resistor-equipped transistors (see “_Data_Sheet_Remark Supersedes data of 2003 Nov 04” for package details). • Simplified circuit design • Reduction of component count • Reduced pick and place costs. QUICK REFERENCE DATA APPLICATIONS SYMBOL PARAMETER • Low current peripheral driver VCEO • Replacement of general purpose transistors in digital applications collector-emitter voltage IO • Control of IC inputs. TYP. MAX. UNIT − 50 V output current (DC) − 100 mA TR1 NPN − − − TR2 PNP − − − R1 bias resistor 4.7 − kΩ R2 open − − − MARKING CODE NPN/NPN COMPLEMENT PNP/PNP COMPLEMENT PRODUCT OVERVIEW PACKAGE TYPE NUMBER PEMD6 PUMD6 PHILIPS EIAJ SOT666 − D6 PEMH7 PEMB3 SC-88 D*6(1) PUMH7 PUMB3 SOT363 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PEMD6; PUMD6 handbook, halfpage 6 5 6 4 5 4 R1 TR2 TR1 R1 1 2 3 1 Top view 2004 Apr 07 MHC028 2 2 3 DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6 ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PEMD6 − plastic surface mounted package; 6 leads SOT666 PUMD6 − plastic surface mounted package; 6 leads SOT363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 SOT363 note 1 − 200 mW SOT666 notes 1 and 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 SOT363 note 1 − 300 mW SOT666 notes 1 and 2 − 300 mW Notes 1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2004 Apr 07 3 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT SOT363 625 K/W SOT666 625 K/W SOT363 416 K/W SOT666 416 K/W Per transistor Rth(j-a) thermal resistance from junction to ambient note 1 Per device Rth(j-a) thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 50 V; IE = 0 − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 μA VCE = 30 V; IB = 0; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 200 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV R1 input resistor 3.3 4.7 6.1 kΩ Cc collector capacitance TR1 (NPN) − − 2.5 pF TR2 (PNP) − − 3 pF 2004 Apr 07 IE = Ie = 0; VCB = 10 V; f = 1 MHz 4 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6 PACKAGE OUTLINES Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 04-11-08 06-03-16 SOT666 2004 Apr 07 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6 Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2004 Apr 07 REFERENCES IEC JEDEC JEITA SC-88 6 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Apr 07 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp8 Date of release: 2004 Apr 07 Document order number: 9397 750 13085