DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMD6 NPN/PNP resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 1999 May 28 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 FEATURES • Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 kΩ) 6 handbook, halfpage • No mutual interference between the transistors • Simplification of circuit design 6 5 5 4 4 R1 • Reduces number of components and board space. TR2 TR1 R1 APPLICATIONS 1 • Especially suitable for space reduction in interface and driver circuits 2 3 Top view • Inverter circuit configurations without use of external resistors. Fig.1 1 MAM381 2 Simplified outline (SC-88; SOT363) and symbol. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 1 3 2 MGA893 - 1 MARKING TYPE NUMBER PUMD6 1999 May 28 MARKING CODE Fig.2 Equivalent inverter symbol. Dt6 2 3 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage positive − +40 V negative − −10 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 May 28 3 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 416 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector cut-off current IE = 0; VCB = 50 V − − 100 nA ICEO collector cut-off current IB = 0; VCE = 30 V − − 1 µA IB = 0; VCE = 30 V; Tj = 150 °C − − 50 µA nA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 hFE DC current gain IC = 1 mA; VCE = 5 V 200 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV R1 input resistor 3.3 4.7 6.1 kΩ − − 2.5 pF IE = ie = 0; VCB = −10 V; f = 1 MHz − − 3 pF NPN transistor Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz PNP transistor Cc 1999 May 28 collector capacitance 4 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor MGS329 103 handbook, halfpage PUMD6 MGS330 103 VCEsat hFE (V) (1) (2) 102 (1) (2) (3) (3) 102 10−1 1 10 IC (mA) 10 10−1 102 TR1 (NPN); VCE = 5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGS331 103 handbook, halfpage hFE 1 10 VCEsat (2) (V) 102 Collector-emitter saturation voltage as a function of collector current; typical values. MGS330 103 (1) IC (mA) (3) 102 102 (1) (2) (3) 10 10−1 1 10 IC (mA) 10 10−1 102 TR2 (PNP); VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.5 Fig.6 DC current gain as a function of collector current; typical values. 1999 May 28 5 1 10 IC (mA) 102 Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1999 May 28 REFERENCES IEC JEDEC EIAJ SC-88 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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