SSPL6040D
Main Product Characteristics:
VDSS
60V
RDS(on)
34mΩ (typ.)
ID
33A
TO-252 (D-PAK)
Schematic diagram
Assignment
Features and Benefits:
Marking and pin
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
33
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
23
IDM
Pulsed Drain Current②
132
Power Dissipation③
45
W
Linear Derating Factor
0.3
W/°C
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=1.0mH
112
mJ
IAS
Avalanche Current @ L=1.0mH
15
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Version : 1.1
A
page 1 of 8
SSPL6040D
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
3.3
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
80
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
60
—
—
V
—
34
40
—
60
—
VGS(th)
Gate threshold voltage
2
—
4
—
2.5
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
14
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
5.3
—
VGS = 10V
td(on)
Turn-on delay time
—
10
—
VGS=10V, VDD=28V,
tr
Rise time
—
36
—
td(off)
Turn-Off delay time
—
26
—
tf
Fall time
—
25
—
ID=10A
Ciss
Input capacitance
—
597
—
VGS = 0V
Coss
Output capacitance
—
155
—
Crss
Reverse transfer capacitance
—
33
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 10A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 60V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 10A,
nC
ns
pF
VDS=44V,
RL=2.6Ω,
RGEN=24Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
33
A
—
—
132
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.76
1.3
V
IS=10A, VGS=0V, TJ = 25°C
trr
Reverse Recovery Time
—
28
—
ns
TJ = 25°C, IF =10A,
Qrr
Reverse Recovery Charge
—
38
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Version : 1.1
page 2 of 8
SSPL6040D
Test circuits and Waveforms
EAS Test Circuit:
Switching Time Test Circuit:
Gate charge test circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Version : 1.1
page 3 of 8
SSPL6040D
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2010.11.18
www.silikron.com
Version : 1.1
page 4 of 8
SSPL6040D
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Version : 1.1
page 5 of 8
SSPL6040D
Mechanical Data：
TO-252 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b1
b3
c
c1
D
D1
E
E1
e
H
L
L1
L2
L3
L4
L5
θ
θ1
θ2
Dimension In Millimeters
Nom
Max
2.300
2.380
0.100
1.070
1.170
0.780
0.850
0.760
0.810
5.330
5.460
0.530
0.580
0.510
0.560
6.100
6.200
5.350 (REF)
6.500
6.600
6.700
4.700
4.830
4.920
2.286 (REF)
9.900
10.100
10.300
1.400
1.500
1.700
2.90 (REF)
0.51 (BSC)
0.900
1.250
0.600
0.800
1.000
1.700
1.800
1.900
0°
8°
5°
7°
9°
5°
7°
9°
Min
2.200
0.000
0.970
0.720
0.710
5.230
0.470
0.460
6.000
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Min
0.087
0.000
0.038
0.028
0.028
0.206
0.019
0.018
0.236
0.256
0.185
0.390
0.055
0.035
0.024
0.067
0°
5°
5°
Dimension In Inches
Nom
0.091
0.042
0.031
0.030
0.210
0.021
0.020
0.240
0.211 (REF)
0.260
0.190
0.090 (REF)
0.398
0.059
0.114 (REF)
0.020 (BSC)
0.031
0.071
7°
7°
Version : 1.1
Max
0.094
0.004
0.046
0.033
0.032
0.215
0.023
0.022
0.244
0.264
0.194
0.406
0.067
0.049
0.039
0.075
8°
9°
9°
page 6 of 8
SSPL6040D
Ordering and Marking Information
Device Marking: SSPL6040D
Package (Available)
TO-252(D-PAK)
Operating Temperature Range
C : -55 to175 ºC
Devices per Unit
Package
Type
Units/
Tape
Tapes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-252
3000
2
6000
30000
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Version : 1.1
page 7 of 8
SSPL6040D
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2010.11.18
www.silikron.com
Version : 1.1
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