SSPL1090 Main Product Characteristics: VDSS 100V RDS(on) 75mΩ (typ.) ID 17A ① TO-220 Features and Benefits: Marking and pin Schematic diagram Assignment Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 ① IDM Pulsed Drain Current ② 68 Power Dissipation ③ 70 W Linear Derating Factor 0.47 W/°C VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=2.3mH 152 mJ IAS Avalanche Current @ L=2.3mH 11.5 A -55 to +175 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2012.06.05 www.silikron.com Version : 1.0 Units A page 1 of 8 SSPL1090 Thermal Resistance Symbol Characterizes RθJC RθJA Typ. Max. Units Junction-to-case ③ — 2.15 °C/W Junction-to-ambient (t ≤ 10s) ④ — 62 °C/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 °C/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Typ. Max. Units V Conditions 100 — — — 75 90 — 150 — 2 — 4 — 2.54 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 14.8 — Qgs Gate-to-Source charge — 4.5 — Qgd Gate-to-Drain("Miller") charge — 4.9 — VGS = 10V td(on) Turn-on delay time — 10.2 — VGS=10V, VDD =46V, tr Rise time — 21.4 — td(off) Turn-Off delay time — 19.0 — tf Fall time — 13.6 — ID =9.0A Ciss Input capacitance — 628 — VGS = 0V Coss Output capacitance — 108 — Crss Reverse transfer capacitance — 13.9 — mΩ V μA nA VGS = 0V, ID= 250μA VGS=10V,ID =9A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =100V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 9A, nC nS pF VDS=80V, RL=5.1Ω, RGEN=12Ω VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 17 ① A — — 68 ① A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.84 1.3 V IS=9A, VGS=0V, TJ = 25°C trr Reverse Recovery Time — 39.5 — nS TJ = 25°C, IF =9A, Qrr Reverse Recovery Charge — 84.7 — nC di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2012.06.05 www.silikron.com Version : 1.0 page 2 of 8 SSPL1090 Test circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ©Silikron Semiconductor CO.,LTD. 2012.06.05 www.silikron.com Version : 1.0 page 3 of 8 SSPL1090 Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. Figure 4: Normalized On-Resistance Vs. Case Temperature 2012.06.05 www.silikron.com Version : 1.0 page 4 of 8 SSPL1090 Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Case Temperature Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2012.06.05 www.silikron.com Version : 1.0 page 5 of 8 SSPL1090 Mechanical Data TO220 PACKAGE OUTLINE DIMENSION_GN E ФP A ϴ1 D D2 ФP1 ϴ3 ϴ2 D1 b1 b A1 ϴ4 L c e Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4 Dimension In Millimeters Min Nom Max 1.300 2.200 2.400 2.600 1.270 1.270 1.370 1.470 0.500 15.600 28.700 9.150 9.900 10.000 10.100 10.160 3.600 1.500 2.54BSC 12.900 13.100 13.300 0 7 0 7 0 3 - ©Silikron Semiconductor CO.,LTD. 0 3 - 2012.06.05 www.silikron.com E1 Min 0.087 0.050 0.390 - 0.508 - Dimension In Inches Nom Max 0.051 0.094 0.102 0.050 0.054 0.058 0.020 0.614 1.130 0.360 0.394 0.398 0.400 0.142 0.059 0.1BSC 0.516 0.524 0 7 0 7 50 70 90 0 0 50 1 3 Version : 1.0 page 6 of 8 SSPL1090 Ordering and Marking Information Device Marking: SSPL1090 Package (Available) TO220 Operating Temperature Range C : -55 to175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6000 6 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=125℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2012.06.05 www.silikron.com Version : 1.0 page 7 of 8 SSPL1090 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2012.06.05 www.silikron.com Version : 1.0 page 8 of 8