SSF5NS70GB
Main Product Characteristics
VDSS
700V
RDS(on)
1.3Ω (typ.)
ID
5A ①
TO-251S
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description:
The SSF5NS70GB series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
5①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
3.1①
IDM
Pulsed Drain Current ②
15
Power Dissipation ③
50
W
Linear Derating Factor
0.4
W/°C
VDS
Drain-Source Voltage
700
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.4mH
54
mJ
IAR
Avalanche Current @ L=22.4mH
2.2
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
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Units
A
page 1 of 8
SSF5NS70GB
Thermal Resistance
Symbol
Characteristics
RθJC
Junction-to-case ③
Typ.
Max.
Units
For TO-251S PKG
—
2.5
℃/W
For TO-251S PKG
—
75
℃/W
Junction-to-ambient
RθJA
(t ≤ 10s) ④
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
700
—
—
—
1.3
1.6
—
3.1
—
2
—
4
—
2.8
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
8.3
—
Qgs
Gate-to-Source charge
—
2.3
—
Qgd
Gate-to-Drain("Miller") charge
—
2.6
—
td(on)
Turn-on delay time
—
10
—
tr
Rise time
—
18
—
td(off)
Turn-Off delay time
—
17
—
tf
Fall time
—
15
—
Ciss
Input capacitance
—
272
—
Coss
Output capacitance
—
168
—
Crss
Reverse transfer capacitance
—
3.14
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
Ω
TJ = 125°C
VDS = VGS, ID = 250μA
V
TJ = 125°C
VDS = 700V,VGS = 0V
μA
TJ = 125°C
VGS =30V
nA
VGS = -30V
ID = 4A,
nC
VDS=100V,
VGS = 10V
VGS=10V, VDS =380V,
ns
RGEN=18Ω,ID =4.5A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
5①
A
—
—
15
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.84
1.2
V
IS=2.8A, VGS=0V
trr
Reverse Recovery Time
—
284
—
nS
TJ = 25°C, IF = IS,
Qrr
Reverse Recovery Charge
—
1395
—
nC
di/dt = 100A/μs
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SSF5NS70GB
Test circuits and Waveforms
EAS Test Circuit:
Switching Time Test Circuit:
Gate charge test circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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SSF5NS70GB
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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SSF5NS70GB
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
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SSF5NS70GB
Mechanical Data：
TO-251S PACKAGE OUTLINE DIMENSION
©Silikron Semiconductor CO.,LTD.
2013.03.14
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SSF5NS70GB
Ordering and Marking Information
Device Marking: SSF5NS70GB
Package (Available)
TO-251S
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-251S
75
60
4500
22500
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj= 150℃ @ 80% of
Max VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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SSF5NS70GB
ATTENTION:
■
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■
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
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