SSF20NS65F Main Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20A TO220F Features and Benefits: Marking and pin Schematic diagram Assignment Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65F series MOSFETs is a new technology. which combines an innovative super junction technology and advance process. this new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 13 IDM Pulsed Drain Current② 80 Units A Power Dissipation③ 34.7 W Linear Derating Factor 0.27 W/°C VDS Drain-Source Voltage 680 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=13.8mH 248 mJ IAR Avalanche Current @ L=13.8mH 6 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C PD @TC = 25°C ©Silikron Semiconductor CO.,LTD. 2011.07.10 www.silikron.com Version : 1.1 page 1 of 8 SSF20NS65F Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 3.6 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 80 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Typ. Max. Units V Conditions 680 — — — 180 200 — 517 — 2 — 4 — 2.40 — — — 1 — — 50 — — 100 -100 — — Total gate charge — 50.58 — Qgs Gate-to-Source charge — 11.71 — Qgd Gate-to-Drain("Miller") charge — 21.63 — VGS = 10V td(on) Turn-on delay time — 15.42 — VGS=10V, VDS=380V, tr Rise time — 44.80 — td(off) Turn-Off delay time — 30.92 — tf Fall time — 40.36 — ID=18A Ciss Input capacitance — 1514 — VGS = 0V Coss Output capacitance — 57.44 — Crss Reverse transfer capacitance — 8.43 — mΩ V μA nA VGS = 0V, ID = 250μA VGS=10V,ID = 13A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 20A, nC ns pF VDS=480V, RL=18Ω, RGEN=3.38Ω VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 20 A — — 80 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.87 1.3 V IS=20A, VGS=0V trr Reverse Recovery Time — 370 — ns TJ = 25°C, IF =20A, di/dt = Qrr Reverse Recovery Charge — 5 — uC 100A/μs ©Silikron Semiconductor CO.,LTD. 2011.07.10 www.silikron.com Version : 1.1 page 2 of 8 SSF20NS65F Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires. ©Silikron Semiconductor CO.,LTD. 2011.07.10 www.silikron.com Version : 1.1 page 3 of 8 SSF20NS65F Typical electrical and thermal characteristics Figure 1: Power dissipation Figure 2. Typ. Gate to source cut‐off voltage Figure 3. Typ. gate charge ©Silikron Semiconductor CO.,LTD. Figure 4: Typ. Capacitances 2011.07.10 www.silikron.com Version : 1.1 page 4 of 8 SSF20NS65F Typical electrical and thermal characteristics Figure 5. Drain‐source breakdown voltage Figure 6. Drain‐source on‐state resistance ©Silikron Semiconductor CO.,LTD. 2011.07.10 www.silikron.com Version : 1.1 page 5 of 8 SSF20NS65F Mechanical Data: TO220F PACKAGE OUTLINE DIMENSION Symbol A A1 A2 A3 B1 B2 B3 C C1 C2 D D1 D2 D3 E E1 E2 E3 E4 Dimension In Millimeters Min Nom Max 9.960 10.160 10.360 7.000 3.080 3.180 3.280 9.260 9.460 9.660 15.670 15.870 16.070 4.500 4.700 4.900 6.480 6.680 6.880 3.200 3.300 3.400 15.600 15.800 16.000 9.550 9.750 9.950 2.54 (TYP) 1.470 0.700 0.800 0.900 0.250 0.350 0.450 2.340 0.450 2.560 ϴ ©Silikron Semiconductor CO.,LTD. 2.540 0.700 1.0*450 0.500 2.760 2.740 0.600 2.960 300 Dimension In Inches Nom 0.400 0.000 0.125 0.372 0.625 0.185 0.263 0.130 0.622 0.384 1.00 (TYP) 0.028 0.031 0.010 0.014 Min 0.392 0.276 0.121 0.365 0.617 0.177 0.255 0.126 0.614 0.376 0.092 0.018 0.101 0.100 0.028 1.0*450 0.020 0.109 Max 0.408 0.000 0.129 0.380 0.633 0.193 0.271 0.134 0.630 0.392 0.058 0.035 0.018 0.108 0.024 0.117 300 2011.07.10 www.silikron.com Version : 1.1 page 6 of 8 SSF20NS65F Ordering and Marking Information Device Marking: SSF20NS65F Package (Available) TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag e Type Units/Tu Tubes/Inner be Box TO220F 50 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner Inner Box Boxes/Carton Box 1000 6 Duration Sample Size Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2011.07.10 www.silikron.com Version : 1.1 Units/Carton Box 6000 page 7 of 8 SSF20NS65F ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2011.07.10 www.silikron.com Version : 1.1 page 8 of 8