KSMB630 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID 200V 0.4Ω 9A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 9 Continuous Drain Current-T=100℃ 5.7 Pulsed Drain Current2 36 EAS Single Pulse Avalanche Energy3 250 PD Power Dissipation4 74 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 40 RƟJA Thermal Resistance, Junction to Ambient1 1.7 www.kersemi.com ℃/W 1 KSMB630 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMB630 KSMB630 TO-263 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 200 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — — 0.4 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 3.8 — — — — — — — — — — — — 9.4 — — 28 — — 39 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time — 20 — Qg Total Gate Charge — — 43 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 7.0 Gate-Drain “Miller” Charge ID=6A — — 23 ns ns ns ns nC nC nC — — 2.0 V — 170 340 ns — 1.1 2.2 nC Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% www.kersemi.com 2 KSMB630 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig. 1 Typical Output Characteristics, TC = 25 ° Fig. 2 Typical Transfer Characteristics Fig. 3 Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 KSMB630 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4