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KSMB630
KERSMI ELECTRONIC CO.,LTD.
200V
N-channel MOSFET
Description
This N-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1)
2)
3)
4)
BVDSS
RDSON
ID
200V
0.4Ω
9A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-263
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
9
Continuous Drain Current-T=100℃
5.7
Pulsed Drain Current2
36
EAS
Single Pulse Avalanche Energy3
250
PD
Power Dissipation4
74
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+150
℃
Ratings
Units
ID
A
mJ
W
Thermal Characteristics
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
40
RƟJA
Thermal Resistance, Junction to Ambient1
1.7
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℃/W
1
KSMB630
KERSMI ELECTRONIC CO.,LTD.
200V
N-channel MOSFET
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMB630
KSMB630
TO-263
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
200
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
25
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
2.0
—
4.0
V
VDS=10V,ID=6A
—
—
0.4
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
3.8
—
—
—
—
—
—
—
—
—
—
—
—
9.4
—
—
28
—
—
39
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
—
20
—
Qg
Total Gate Charge
—
—
43
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
—
7.0
Gate-Drain “Miller” Charge
ID=6A
—
—
23
ns
ns
ns
ns
nC
nC
nC
—
—
2.0
V
—
170
340
ns
—
1.1
2.2
nC
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
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KSMB630
KERSMI ELECTRONIC CO.,LTD.
200V
N-channel MOSFET
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
Fig. 1 Typical Output Characteristics,
TC = 25 °
Fig. 2 Typical Transfer Characteristics
Fig. 3 Typical Output Characteristics,
TC = 150 °C
Fig. 4 - Normalized On-Resistance vs.
Temperature
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KSMB630
KERSMI ELECTRONIC CO.,LTD.
200V
N-channel MOSFET
Fig. 5 - Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 6 - Typical Source-Drain
Diode Forward Voltage
Fig. 7 - Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 8 - Maximum Safe
Operating Area
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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