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KSMT2102N
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Description
This N-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
200V
1.5Ω
ID
0.96A
1)
2)
Low gate charge.
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-223
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
0.96
Continuous Drain Current-T=100℃
0.60
Pulsed Drain Current2
7.7
EAS
Single Pulse Avalanche Energy3
50
PD
Power Dissipation4
3.1
TJ, TSTG
Operating and Storage Junction Temperature
-55 to
Range
+150
ID
A
mJ
W
℃
Thermal Characteristics
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
40
RƟJA
Thermal Resistance, Junction to Ambient1
60
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Units
℃/W
1
KSMT2102N
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMT2102N
KSMT2102N
SOT-223
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
200
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
25
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
2.0
—
4.0
V
VDS=10V,ID=6A
—
—
1.5
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
0.51
—
—
—
140
—
—
53
—
—
15
—
—
8.2
—
—
17
—
—
14
—
—
8.9
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
—
—
8.2
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
—
1.8
Gate-Drain “Miller” Charge
ID=6A
—
—
4.5
ns
ns
ns
ns
nC
nC
nC
—
—
2.0
V
—
150
310
ns
—
0.6
1.4
nC
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
Notes:
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KSMT2102N
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs.
Temperature
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KSMT2102N
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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