SSTS30120CT/CTF Main Product Characteristics: IF 2×15A VRRM 120V Tj(max) 150℃ Vf(max) 0.85V TO220 TO220F SSTS30120CT SSTS30120CTF Schematic Diagram Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 120 V RMS Reverse Voltage 84 V Per diode 15 A Per device 30 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 200 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Value Unit TO220 2.3 ℃/W TO220F 5.3 ℃/W Thermal Resistance Symbol RθJC RθJC Characterizes Maximum Thermal Resistance Junction To Case(per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes VR Reverse Breakdown Voltage VF Forward Voltage Drop IR Leakage Current ©Silikron Semiconductor CO., LTD. Min Typ Max 120 V 0.85 0.7 0.1 20 2011.5.26 www.silikron.com Unit V mA Version: 2.0 Test Condition IR=0.5mA IF=15A, TJ=25℃ IF=15A, TJ=125℃ VR=120V, TJ=25℃ VR=120V, TJ=125℃ page 1of6 SSTS30120CT/CTF I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.0 page 2of6 SSTS30120CT/CTF Mechanical Data： TO220: ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.0 page 3of6 SSTS30120CT/CTF TO220F： ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.0 page 4of6 SSTS30120CT/CTF Ordering and Marking Information Device Marking: SSTS30120CT&SSTS30120CTF Package (Available) TO-220&TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag Units/ Tubes/Inne Units/Inne e Type Tube r r Box Box 50 20 1000 TO220 20 1000 TO220F 50 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Inner Boxes/Carton Box Units/Carto n Box 6 6000 6 6000 Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2011.5.26 www.silikron.com Version: 2.0 page 5of6 SSTS30120CT/CTF ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 468 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.0 page 6of6