SSBD10100CT/ SSBD10100CTF Main Product Characteristics: IF 2×5A VRRM 100V Tj(max) 150℃ Vf(max) 0.8V TO220 TO220F SSBD10100CT SSBD10100CTF Schematic Diagram Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 100 V RMS Reverse Voltage 70 V Per diode 5 A Per device 10 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 180 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Value Unit TO220 2 ℃/W TO220F 4 ℃/W Thermal Resistance Symbol RθJC RθJC Characterizes Maximum Thermal Resistance Junction To Case(per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min VR Reverse Breakdown Voltage VF Forward Voltage Drop IR Leakage Current ©Silikron Semiconductor CO., LTD. Typ Max 100 V 0.8 0.7 0.1 10 2011.5.26 www.silikron.com Unit V mA Version: 2.2 Test Condition IR=0.5mA IF=5A, TJ=25℃ IF=5A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ page 1of6 SSBD10100CT/ SSBD10100CTF I-V Curves: Figure 1:Typical Forward Characteristics Figure 2:Typical Capacitance Characteristics Figure 3:Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.2 page 2of6 SSBD10100CT/ SSBD10100CTF Mechanical Data: TO220: TO220 PACKAGE OUTLINE DIMENSION_GN E ФP A ϴ1 D D2 ФP1 ϴ3 ϴ2 D1 b1 b A1 ϴ4 L c e Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 Dimension In Millimeters Min Nom Max 1.300 2.200 2.400 2.600 1.270 1.270 1.370 1.470 0.500 15.600 28.700 9.150 9.900 10.000 10.100 10.160 3.600 1.500 2.54BSC 12.900 13.100 13.300 70 70 ϴ3 - ϴ4 - ©Silikron Semiconductor CO., LTD. E1 Dimension In Inches Nom Max 0.051 0.094 0.102 0.050 0.054 0.058 0.020 0.614 1.130 0.360 0.394 0.398 0.400 0.142 0.059 0.1BSC 0.508 0.516 0.524 70 Min 0.087 0.050 0.390 - 70 - 3 - 5 0 70 90 30 - 10 30 50 0 2011.5.26 www.silikron.com - Version: 2.2 page 3of6 SSBD10100CT/ SSBD10100CTF TO220F: Symbol E A A1 A2 A4 A5 c c1 D Q H1 e ФP L L1 D1 ФP1 ФP2 ФP3 ϴ1 ϴ2 DEP F1 F2 F3 F4 G1 G2 G3 E1 K1 b1 b2 Dimension In Millimeters Min Nom Max 10.040 10.200 10.360 4.500 4.700 4.900 2.340 2.540 2.740 0.950 1.050 1.150 2.650 2.750 2.850 1.00REF 0.420 0.500 0.580 0.420 0.500 0.580 15.670 15.870 16.070 9.20REF 6.70REF 2.54BSC 3.183REF 12.780 12.980 13.180 3.250 3.450 3.650 9.17REF 1.400 1.500 1.600 1.150 1.200 1.250 3.45REF Min 0.395 0.177 0.092 0.037 0.104 0.017 0.017 0.617 0.503 0.128 0.055 0.045 Dimension In Inches Nom 0.402 0.185 0.100 0.041 0.108 0.039REF 0.020 0.020 0.625 0.362REF 0.264REF 0.10BSC 0.125REF 0.511 0.136 0.362REF 0.059 0.047 0.136REF Max 0.408 0.193 0.108 0.045 0.112 0.023 0.023 0.633 0.519 0.144 0.063 0.049 5o 0.050 1.900 13.800 7o 45o 0.100 2.000 13.900 9o 0.150 2.100 14.000 5o 0.002 0.075 0.543 7o 45o 0.004 0.079 0.547 9o 0.006 0.083 0.551 3.200 5.300 6.600 6.900 1.100 9.900 0.650 1.050 0.700 3.300 5.400 6.700 7.000 1.300 10.000 0.700 1.200 0.800 3.400 5.500 6.800 7.100 1.500 10.100 0.750 1.350 0.850 0.126 0.209 0.260 0.272 0.043 0.390 0.026 0.041 0.028 0.130 0.213 0.264 0.276 0.051 0.394 0.028 0.047 0.031 0.134 0.217 0.268 0.280 0.059 0.398 0.030 0.053 0.033 Version: 2.2 page ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com 4of6 SSBD10100CT/ SSBD10100CTF Ordering and Marking Information Device Marking: SSBD100100CT&SSBD10100CTF Package (Available) TO-220&TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Units/ Tubes/Inner Type Tube Box TO220 TO220F Inner Boxes/Carton Box Units/Carto n Box 50 20 1000 6 6000 50 20 1000 6 6000 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Units/In ner Box Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2011.5.26 www.silikron.com Version: 2.2 page 5of6 SSBD10100CT/ SSBD10100CTF ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. 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Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.2 page 6of6