Datasheet

SSBD10100CT/ SSBD10100CTF
Main Product Characteristics:
IF
2×5A
VRRM
100V
Tj(max)
150℃
Vf(max)
0.8V
TO220
TO220F
SSBD10100CT
SSBD10100CTF
Schematic Diagram
Features and Benefits:



High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
VRRM
VR(RMS)
Characterizes
Value
Unit
Peak Repetitive Reverse Voltage
100
V
RMS Reverse Voltage
70
V
Per diode
5
A
Per device
10
A
IF(AV)
Average Forward Current
IFSM
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
180
A
IRRM
Peak Repetitive Reverse Surge Current(Tp=2us)
0.5
A
TJ
Maximum operation Junction Temperature Range
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
Value
Unit
TO220
2
℃/W
TO220F
4
℃/W
Thermal Resistance
Symbol
RθJC
RθJC
Characterizes
Maximum Thermal Resistance Junction To
Case(per leg)
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min
VR
Reverse Breakdown Voltage
VF
Forward Voltage Drop
IR
Leakage Current
©Silikron Semiconductor CO., LTD.
Typ
Max
100
V
0.8
0.7
0.1
10
2011.5.26
www.silikron.com
Unit
V
mA
Version: 2.2
Test Condition
IR=0.5mA
IF=5A, TJ=25℃
IF=5A, TJ=125℃
VR=100V, TJ=25℃
VR=100V, TJ=125℃
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SSBD10100CT/ SSBD10100CTF
I-V Curves:
Figure 1:Typical Forward Characteristics
Figure 2:Typical Capacitance Characteristics
Figure 3:Typical Reverse Characteristics
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com
Version: 2.2
page
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SSBD10100CT/ SSBD10100CTF
Mechanical Data:
TO220:
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
70
70
ϴ3
-
ϴ4
-
©Silikron Semiconductor CO., LTD.
E1
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
70
Min
0.087
0.050
0.390
-
70
-
3
-
5
0
70
90
30
-
10
30
50
0
2011.5.26
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-
Version: 2.2
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SSBD10100CT/ SSBD10100CTF
TO220F:
Symbol
E
A
A1
A2
A4
A5
c
c1
D
Q
H1
e
ФP
L
L1
D1
ФP1
ФP2
ФP3
ϴ1
ϴ2
DEP
F1
F2
F3
F4
G1
G2
G3
E1
K1
b1
b2
Dimension In Millimeters
Min
Nom
Max
10.040
10.200
10.360
4.500
4.700
4.900
2.340
2.540
2.740
0.950
1.050
1.150
2.650
2.750
2.850
1.00REF
0.420
0.500
0.580
0.420
0.500
0.580
15.670
15.870
16.070
9.20REF
6.70REF
2.54BSC
3.183REF
12.780
12.980
13.180
3.250
3.450
3.650
9.17REF
1.400
1.500
1.600
1.150
1.200
1.250
3.45REF
Min
0.395
0.177
0.092
0.037
0.104
0.017
0.017
0.617
0.503
0.128
0.055
0.045
Dimension In Inches
Nom
0.402
0.185
0.100
0.041
0.108
0.039REF
0.020
0.020
0.625
0.362REF
0.264REF
0.10BSC
0.125REF
0.511
0.136
0.362REF
0.059
0.047
0.136REF
Max
0.408
0.193
0.108
0.045
0.112
0.023
0.023
0.633
0.519
0.144
0.063
0.049
5o
0.050
1.900
13.800
7o
45o
0.100
2.000
13.900
9o
0.150
2.100
14.000
5o
0.002
0.075
0.543
7o
45o
0.004
0.079
0.547
9o
0.006
0.083
0.551
3.200
5.300
6.600
6.900
1.100
9.900
0.650
1.050
0.700
3.300
5.400
6.700
7.000
1.300
10.000
0.700
1.200
0.800
3.400
5.500
6.800
7.100
1.500
10.100
0.750
1.350
0.850
0.126
0.209
0.260
0.272
0.043
0.390
0.026
0.041
0.028
0.130
0.213
0.264
0.276
0.051
0.394
0.028
0.047
0.031
0.134
0.217
0.268
0.280
0.059
0.398
0.030
0.053
0.033
Version: 2.2
page
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2011.5.26
www.silikron.com
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SSBD10100CT/ SSBD10100CTF
Ordering and Marking Information
Device Marking: SSBD100100CT&SSBD10100CTF
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
TO220
TO220F
Inner
Boxes/Carton
Box
Units/Carto
n
Box
50
20
1000
6
6000
50
20
1000
6
6000
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
Units/In
ner
Box
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
©Silikron Semiconductor CO., LTD.
Duration
Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
2011.5.26
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Version: 2.2
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SSBD10100CT/ SSBD10100CTF
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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©Silikron Semiconductor CO., LTD.
2011.5.26
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Version: 2.2
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