SSBD2060CT/CTF Main Product Characteristics: IF 2×10A VRRM 60V Tj(max) 150℃ Vf(max) 0.63V TO220 TO220F SSBD2060CT SSBD2060CTF Schematic Diagram Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 60 V RMS Reverse Voltage 42 V Per diode 10 A Per device 20 A 180 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 2 A TJ Maximum operation Junction Temperature Range -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Value Unit TO220 2 ℃/W TO220F 4 ℃/W Thermal Resistance Symbol RθJC RθJC Characterizes Maximum Thermal Resistance Junction To Case(per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min VR Reverse Breakdown Voltage VF Forward Voltage Drop IR Leakage Current ©Silikron Semiconductor CO., LTD. Typ Max 60 V 0.63 0.59 0.2 50 2011.5.26 www.silikron.com Unit V mA Version: 2.1 Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=10A, TJ=125℃ VR=60V, TJ=25℃ VR=60V, TJ=125℃ page 1of6 SSBD2060CT/CTF I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.1 page 2of6 SSBD2060CT/CTF Mechanical Data： TO220: TO220 PACKAGE OUTLINE DIMENSION_GN E ФP A ϴ1 D D2 ФP1 ϴ3 ϴ2 D1 b1 b A1 ϴ4 L c e Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 Dimension In Millimeters Min Nom Max 1.300 2.200 2.400 2.600 1.270 1.270 1.370 1.470 0.500 15.600 28.700 9.150 9.900 10.000 10.100 10.160 3.600 1.500 2.54BSC 12.900 13.100 13.300 70 70 ϴ3 - ϴ4 - ©Silikron Semiconductor CO., LTD. E1 Dimension In Inches Nom Max 0.051 0.094 0.102 0.050 0.054 0.058 0.020 0.614 1.130 0.360 0.394 0.398 0.400 0.142 0.059 0.1BSC 0.508 0.516 0.524 70 Min 0.087 0.050 0.390 - 70 - 3 - 5 0 70 90 30 - 10 30 50 0 2011.5.26 www.silikron.com - Version: 2.1 page 3of6 SSBD2060CT/CTF TO220F： ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.1 page 4of6 SSBD2060CT/CTF Ordering and Marking Information Device Marking: SSBD2060CT&SSBD2060CTF Package (Available) TO-220&TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag Units/ Tubes/Inne Units/Inne e Type Tube r r Box Box 50 20 1000 TO220 20 1000 TO220F 50 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Inner Boxes/Carton Box Units/Carto n Box 6 6000 6 6000 Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2011.5.26 www.silikron.com Version: 2.1 page 5of6 SSBD2060CT/CTF ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 2.1 page 6of6