DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplified circuit design VCEO • Reduction of component count • Reduced pick and place costs. APPLICATIONS PARAMETER TYP. MAX. UNIT collector-emitter voltage − −50 V IO output current (DC) − −20 mA R1 bias resistor 100 − kΩ R2 bias resistor 100 − kΩ • General purpose switching and amplification • Inverter and interface circuits DESCRIPTION • Circuit driver. PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA115EE SOT416 SC-75 5E PDTC115EE PDTA115EEF SOT490 SC-89 6B PDTC115EEF PDTA115EK SOT346 SC-59 62 PDTC115EK PDTA115EM SOT883 SC-101 F6 PDTC115EM PDTA115ES SOT54 (TO-92) SC-43 TA115E PDTC115ES PDTA115ET SOT23 − *AB(1) PDTC115ET PDTA115EU SOT323 SC-70 *7C(1) PDTC115EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Jul 30 2 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PDTA115ES handbook, halfpage 2 R1 1 DESCRIPTION 1 base 2 collector 3 emitter 1 base 2 emitter 3 collector 1 base 2 emitter 3 collector 1 2 R2 3 3 MAM338 PDTA115EE PDTA115EEF PDTA115EK handbook, halfpage 3 3 R1 PDTA115ET 1 PDTA115EU R2 1 2 2 Top view MDB271 PDTA115EM handbook, halfpage 3 R1 2 3 1 R2 1 2 Bottom view MDB267 2004 Jul 30 3 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PDTA115EE − plastic surface mounted package; 3 leads SOT416 PDTA115EEF − plastic surface mounted package; 3 leads SOT490 PDTA115EK − plastic surface mounted package; 3 leads SOT346 PDTA115EM − leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 PDTA115ES − plastic single-ended leaded (through hole) package; 3 leads SOT54 PDTA115ET − plastic surface mounted package; 3 leads SOT23 PDTA115EU − plastic surface mounted package; 3 leads SOT323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −10 V VI input voltage positive − +10 V negative − −40 V IO output current (DC) − −20 mA ICM peak collector current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT23 note 1 − 250 mW SOT54 note 1 − 500 mW SOT323 note 1 − 200 mW SOT346 note 1 − 250 mW SOT416 note 1 − 150 mW SOT490 notes 1 and 2 − 250 mW SOT883 notes 2 and 3 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. 2004 Jul 30 4 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT Tamb ≤ 25 °C thermal resistance from junction to ambient SOT23 note 1 500 K/W SOT54 note 1 250 K/W SOT323 note 1 625 K/W SOT346 note 1 500 K/W SOT416 note 1 833 K/W SOT490 notes 1 and 2 500 K/W SOT883 notes 2 and 3 500 K/W Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE = 0 A − − −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A − − −1 μA VCE = −30 V; IB = 0 A; Tj = 150 °C − − −50 μA μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −50 hFE DC current gain VCE = −5 V; IC = −5 mA 80 − − VCEsat collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA − − −150 mV Vi(off) input-off voltage IC = −100 μA; VCE = −5 V − −1.2 −0.5 V Vi(on) input-on voltage IC = −1 mA; VCE = −0.3 V −3 −1.6 − V R1 input resistor 70 100 130 kΩ R2 -------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance − − 3 2004 Jul 30 IE = ie = 0 A; VCB = −10 V; f = 1 MHz 5 pF NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series PACKAGE OUTLINES Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2004 Jul 30 REFERENCES IEC JEDEC JEITA SC-75 6 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series Plastic surface-mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 2004 Jul 30 REFERENCES IEC JEDEC JEITA SC-89 7 EUROPEAN PROJECTION ISSUE DATE 05-07-28 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series Plastic surface-mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 2004 Jul 30 REFERENCES IEC JEDEC JEITA TO-236 SC-59A 8 EUROPEAN PROJECTION ISSUE DATE 04-11-11 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Jul 30 REFERENCES IEC JEDEC JEITA SC-101 9 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Jul 30 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 10 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jul 30 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 11 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2004 Jul 30 REFERENCES IEC JEDEC JEITA SC-70 12 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ PDTA115E series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Jul 30 13 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp14 Date of release: 2004 Jul 30 Document order number: 9397 750 13648