Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA123E series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
Supersedes data of 2004 Apr 07
2004 Aug 02
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
FEATURES
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
• Simplified circuit design
VCEO
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
PARAMETER
TYP.
MAX.
UNIT
collector-emitter
voltage
−
−50
V
IO
output current (DC)
−
−100
mA
R1
bias resistor
2.2
−
kΩ
R2
bias resistor
2.2
−
kΩ
• General purpose switching and amplification
• Inverter and interface circuits
DESCRIPTION
• Circuit driver.
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
NPN COMPLEMENT
PHILIPS
EIAJ
PDTA123EE
SOT416
SC-75
5C
PDTC123EE
PDTA123EEF
SOT490
SC-89
6C
PDTC123EEF
PDTA123EK
SOT346
SC-59
42
PDTC123EK
PDTA123EM
SOT883
SC-101
F7
PDTC123EM
PDTA123ES
SOT54 (TO-92)
SC-43
TA123E
PDTC123ES
PDTA123ET
SOT23
−
*21(1)
PDTC123ET
PDTA123EU
SOT323
SC-70
*42(1)
PDTC123EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 02
2
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
PDTA123ES
handbook, halfpage
2
R1
1
DESCRIPTION
1
base
2
collector
3
emitter
1
base
2
emitter
3
collector
1
base
2
emitter
3
collector
1
2
R2
3
3
MAM338
PDTA123EE
PDTA123EEF
PDTA123EK
handbook, halfpage
3
3
R1
PDTA123ET
1
PDTA123EU
R2
1
2
2
Top view
MDB271
PDTA123EM
handbook, halfpage
3
R1
2
3
1
R2
1
2
Bottom view
MDB267
2004 Aug 02
3
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PDTA123EE
−
plastic surface mounted package; 3 leads
SOT416
PDTA123EEF
−
plastic surface mounted package; 3 leads
SOT490
PDTA123EK
−
plastic surface mounted package; 3 leads
SOT346
PDTA123EM
−
leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
SOT883
PDTA123ES
−
plastic single-ended leaded (through hole) package; 3 leads
SOT54
PDTA123ET
−
plastic surface mounted package; 3 leads
SOT23
PDTA123EU
−
plastic surface mounted package; 3 leads
SOT323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−10
V
VI
input voltage
positive
−
+10
V
negative
−
−12
V
IO
output current (DC)
−
−100
mA
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT54
note 1
−
500
mW
SOT23
note 1
−
250
mW
SOT346
note 1
−
250
mW
SOT323
note 1
−
200
mW
SOT416
note 1
−
150
mW
SOT490
notes 1 and 2
−
250
mW
SOT883
notes 2 and 3
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 02
4
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
Tamb ≤ 25 °C
thermal resistance from junction to ambient
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT416
note 1
830
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −50 V; IE = 0 A
−
−
−100
nA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB = 0 A
−
−
−1
μA
VCE = −30 V; IB = 0 A; Tj = 150 °C
−
−
−50
μA
mA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
−
−2
hFE
DC current gain
VCE = −5 V; IC = −20 mA
30
−
−
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−
−150
mV
Vi(off)
input-off voltage
IC = −1 mA; VCE = −5 V
−
−1.2
−0.5
V
Vi(on)
input-on voltage
IC = −20 mA; VCE = −0.3 V
−2
−1.6
−
V
R1
input resistor
1.54
2.2
2.86
kΩ
R2
-------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
−
−
3
2004 Aug 02
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
5
pF
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
PACKAGE OUTLINES
Plastic surface-mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
SC-75
6
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
Plastic surface-mounted package; 3 leads
SOT490
D
E
B
A
X
HE
v M A
3
A
1
c
2
e1
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
v
w
mm
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.0
0.5
1.7
1.5
0.5
0.3
0.1
0.1
OUTLINE
VERSION
SOT490
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
SC-89
7
EUROPEAN
PROJECTION
ISSUE DATE
05-07-28
06-03-16
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
Plastic surface-mounted package; 3 leads
SOT346
E
D
A
B
X
HE
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
1.9
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
OUTLINE
VERSION
SOT346
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
TO-236
SC-59A
8
EUROPEAN
PROJECTION
ISSUE DATE
04-11-11
06-03-16
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
SC-101
9
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
10
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
11
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2004 Aug 02
REFERENCES
IEC
JEDEC
JEITA
SC-70
12
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123E series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
2004 Aug 02
13
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/07/pp14
Date of release: 2004 Aug 02
Document order number: 9397 750 13649