DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series FEATURES QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplified circuit design VCEO • Reduction of component count • Reduced pick and place costs. APPLICATIONS PARAMETER TYP. MAX. UNIT collector-emitter voltage − −50 V IO output current (DC) − −100 mA R1 bias resistor 2.2 − kΩ R2 bias resistor 2.2 − kΩ • General purpose switching and amplification • Inverter and interface circuits DESCRIPTION • Circuit driver. PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA123EE SOT416 SC-75 5C PDTC123EE PDTA123EEF SOT490 SC-89 6C PDTC123EEF PDTA123EK SOT346 SC-59 42 PDTC123EK PDTA123EM SOT883 SC-101 F7 PDTC123EM PDTA123ES SOT54 (TO-92) SC-43 TA123E PDTC123ES PDTA123ET SOT23 − *21(1) PDTC123ET PDTA123EU SOT323 SC-70 *42(1) PDTC123EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Aug 02 2 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PDTA123ES handbook, halfpage 2 R1 1 DESCRIPTION 1 base 2 collector 3 emitter 1 base 2 emitter 3 collector 1 base 2 emitter 3 collector 1 2 R2 3 3 MAM338 PDTA123EE PDTA123EEF PDTA123EK handbook, halfpage 3 3 R1 PDTA123ET 1 PDTA123EU R2 1 2 2 Top view MDB271 PDTA123EM handbook, halfpage 3 R1 2 3 1 R2 1 2 Bottom view MDB267 2004 Aug 02 3 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PDTA123EE − plastic surface mounted package; 3 leads SOT416 PDTA123EEF − plastic surface mounted package; 3 leads SOT490 PDTA123EK − plastic surface mounted package; 3 leads SOT346 PDTA123EM − leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 PDTA123ES − plastic single-ended leaded (through hole) package; 3 leads SOT54 PDTA123ET − plastic surface mounted package; 3 leads SOT23 PDTA123EU − plastic surface mounted package; 3 leads SOT323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −10 V VI input voltage positive − +10 V negative − −12 V IO output current (DC) − −100 mA ICM peak collector current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT416 note 1 − 150 mW SOT490 notes 1 and 2 − 250 mW SOT883 notes 2 and 3 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. 2004 Aug 02 4 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT Tamb ≤ 25 °C thermal resistance from junction to ambient SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT416 note 1 830 K/W SOT490 notes 1 and 2 500 K/W SOT883 notes 2 and 3 500 K/W Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE = 0 A − − −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A − − −1 μA VCE = −30 V; IB = 0 A; Tj = 150 °C − − −50 μA mA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −2 hFE DC current gain VCE = −5 V; IC = −20 mA 30 − − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV Vi(off) input-off voltage IC = −1 mA; VCE = −5 V − −1.2 −0.5 V Vi(on) input-on voltage IC = −20 mA; VCE = −0.3 V −2 −1.6 − V R1 input resistor 1.54 2.2 2.86 kΩ R2 -------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance − − 3 2004 Aug 02 IE = ie = 0 A; VCB = −10 V; f = 1 MHz 5 pF NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series PACKAGE OUTLINES Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2004 Aug 02 REFERENCES IEC JEDEC JEITA SC-75 6 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series Plastic surface-mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 2004 Aug 02 REFERENCES IEC JEDEC JEITA SC-89 7 EUROPEAN PROJECTION ISSUE DATE 05-07-28 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series Plastic surface-mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 2004 Aug 02 REFERENCES IEC JEDEC JEITA TO-236 SC-59A 8 EUROPEAN PROJECTION ISSUE DATE 04-11-11 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Aug 02 REFERENCES IEC JEDEC JEITA SC-101 9 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Aug 02 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 10 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Aug 02 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 11 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2004 Aug 02 REFERENCES IEC JEDEC JEITA SC-70 12 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and 2004 Aug 02 13 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/07/pp14 Date of release: 2004 Aug 02 Document order number: 9397 750 13649