BSC010N04LSI MOSFET OptiMOSTMPower-MOSFET,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •Optimizedforsynchronousrectification •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on) •100%avalanchetested •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.05 mΩ ID 100 A QOSS 83 nC QG(0V..10V) 87 nC 1 2 7 6 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC010N04LSI TDSON-8 FL 010N04LI - 1) 5 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 100 100 100 37 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 50 A TC=25°C EAS - - 230 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 139 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.9 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 30 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 3 0.5 - mA VDS=32V,VGS=0V,Tj=25°C VDS=32V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.1 0.9 1.4 1.05 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance1) RG - 0.8 1.6 Ω - Transconductance gfs 130 260 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. 40 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 6200 8680 pF VGS=0V,VDS=20V,f=1MHz Coss - 1900 2660 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 140 280 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 22 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 48 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 72 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 17 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) Output capacitance 1) 1) Defined by design. Not subject to production test Final Data Sheet 4 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=20V,ID=50A,VGS=0to10V 9.9 - nC VDD=20V,ID=50A,VGS=0to10V - 14 20 nC VDD=20V,ID=50A,VGS=0to10V Qsw - 19 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 87 122 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 45 63 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 76 - nC VDS=0.1V,VGS=0to10V Qoss - 83 116 nC VDD=20V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 15 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 100 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.57 0.7 V VGS=0V,IF=20A,Tj=25°C Reverse recovery charge Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 140 100 120 80 ID[A] Ptot[W] 100 80 60 60 40 40 20 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 100 µs 102 100 1 ms 0.5 ZthJC[K/W] ID[A] 10 ms DC 1 10 0.2 10 -1 0.1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Diagram5:Typ.outputcharacteristics 800 Diagram6:Typ.drain-sourceonresistance 2.0 5V 4.5 V 10 V 700 4V 3.5 V 600 1.5 3.2 V 3.5 V 400 RDS(on)[mΩ] ID[A] 500 3.2 V 300 4V 4.5 V 5V 1.0 6V 8V 10 V 3V 200 0.5 2.8 V 100 0 0 1 2 0.0 3 0 20 40 VDS[V] 60 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 °C 25 °C 80 0 80 0 1 2 3 4 5 0 0 VGS[V] 50 75 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 gfs=f(ID);Tj=25°C 7 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.0 2.5 2.0 1.5 1.5 VGS(th)[V] RDS(on)[mΩ] max 1.0 typ 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;IDS=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 180 Tj[°C] 103 Ciss -55 °C 25 °C 125 °C 150 °C Coss 102 IF[A] C[pF] 103 Crss 101 102 100 101 0 10 20 30 40 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 25 °C 32 V 100 °C 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 0 0 20 tAV[µs] 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Gate charge waveforms 10-2 125 °C 10-3 100 °C IDSS[A] 75 °C 10-4 25 °C -5 10 10-6 0 5 10 15 20 25 30 35 VSD[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 5PackageOutlines Figure1OutlineTDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Figure2OutlineFootprint(TDSON-8FL) Final Data Sheet 11 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Figure3OutlineTape(TDSON-8FL) Final Data Sheet 12 Rev.2.2,2016-05-04 OptiMOSTMPower-MOSFET,40V BSC010N04LSI RevisionHistory BSC010N04LSI Revision:2016-05-04,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2016-05-04 Update footnotes and insert max values TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.2,2016-05-04