MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSZ025N04LS DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,40V BSZ025N04LS 1Description TSDSON-8FL (enlarged source interconnection) Features •Optimizedforsynchronousrectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit VDS 40 V S3 6D RDS(on),max 2.5 mΩ G4 5D ID 40 A QOSS 33 nC QG(0V..10V) 37 nC Type/OrderingCode Package Marking RelatedLinks BSZ025N04LS PG-TSDSON-8 FL 025N04L - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 40 40 40 40 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1) - 160 A TC=25°C - - 20 A TC=25°C EAS - - 130 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - RthJA - - 60 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.4 2.0 3.2 2.5 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance1) RG - 1.1 2.2 Ω - Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2630 3680 pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 750 1050 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 60 120 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 6 - ns VDD=20V,VGS=10V,ID=20A, RG,ext,ext=1.6Ω Rise time tr - 7 - ns VDD=20V,VGS=10V,ID=20A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 27 - ns VDD=20V,VGS=10V,ID=20A, RG,ext,ext=1.6Ω Fall time tf - 5 - ns VDD=20V,VGS=10V,ID=20A, RG,ext,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=20V,ID=20A,VGS=0to10V 4.2 - nC VDD=20V,ID=20A,VGS=0to10V - 6.0 8.4 nC VDD=20V,ID=20A,VGS=0to10V Qsw - 8.1 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total Qg - 37 52 nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total Qg - 19 27 nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 32 - nC VDS=0.1V,VGS=0to10V Qoss - 33 46 nC VDD=20V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 6.3 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 40 A TC=25°C IS,pulse - - 160 A TC=25°C VSD - 0.8 1 V VGS=0V,IF=20A,Tj=25°C trr - 24 48 ns VR=20V,IF=20A,diF/dt=400A/µs Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 6 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 50 70 40 60 30 ID[A] Ptot[W] 50 40 20 30 20 10 10 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 10 µs 100 1 µs 0.5 0.2 ZthJC[K/W] 100 µs ID[A] 160 TC[°C] 1 ms 101 10 ms DC 0.1 0.05 10-1 0.02 0.01 single pulse 0 10 10-1 10-1 10 100 101 102 -2 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Diagram5:Typ.outputcharacteristics 160 5V 10 V 4.5 V 140 Diagram6:Typ.drain-sourceonresistance 5 4V 3.5 V 3.2 V 2.8 V 3V 4 120 3.2 V 3V RDS(on)[mΩ] ID[A] 100 80 2.8 V 60 3.5 V 3 4V 4.5 V 5V 2 10 V 40 1 20 0 0.0 0.2 0.4 0.6 0.8 0 1.0 0 40 VDS[V] 80 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 160 120 120 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 80 40 160 30 40 80 40 150 °C 0 120 ID[A] 0 1 2 25 °C 3 4 0 0 VGS[V] 20 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 8 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 2.5 4 2.0 1.5 VGS(th)[V] RDS(on)[mΩ] 3 max 2 typ 1 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C max 150 °C max Ciss Coss 102 Crss 102 IF[A] C[pF] 103 101 0 10 20 101 30 40 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 9 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 20 V 10 8V 32 V 25 °C 101 VGS[V] IAV[A] 8 100 °C 125 °C 6 4 2 100 100 101 102 103 0 0 tAV[µs] 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS 6PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2014-06-27 OptiMOSTMPower-MOSFET,40V BSZ025N04LS RevisionHistory BSZ025N04LS Revision:2014-06-27,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-27 Rev. 2.1 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2014-06-27