DF N1 00 6D -2 PMEG2010BELD 20 V, 1 A low VF MEGA Schottky barrier rectifier 4 August 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • • • • • • • Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 20 V Low forward voltage VF ≤ 490 mV AEC-Q101 qualified Ultra small and leadless SMD plastic package Solderable side pads Package height typ. 0.37 mm 3. Applications • • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C; - - 1 A - - 1 A square wave δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C; [1] square wave VR reverse voltage Tj = 25 °C - - 20 V VF forward voltage IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; - 428 490 mV - 28 50 µA Tj = 25 °C IR reverse current VR = 10 V; Tj = 25 °C Scan or click this QR code to view the latest information for this product PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 1.6 - ns Tj = 25 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DFN1006D-2 (SOD882D) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG2010BELD Package Name Description Version DFN1006D-2 DFN1006D-2: leadless ultra small plastic package; 2 terminals SOD882D 7. Marking Table 4. Marking codes Type number Marking code PMEG2010BELD 0000 1001 PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier CATHODE BAR READING DIRECTION VENDOR CODE READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac477 Fig. 1. SOD882D binary marking code description 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 20 V IF forward current Tsp ≤ 130 °C - 1 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C; - 1 A - 1 A square wave δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C; [1] square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 3 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 6 A Ptot total power dissipation Tamb ≤ 25 °C [2][3] - 370 mW [4][3] - 735 mW [1][3] - 1135 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 cathode 1 cm . PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min thermal resistance from junction to solder point [1] [2] [3] [4] [5] [6] Typ Max Unit [1][2][3] - - 340 K/W [1][4][3] - - 170 K/W [1][5][3] - - 110 K/W - - 25 K/W [6] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. 006aac928 103 duty cycle = Zth(j-a) (K/W) 0.75 1 0.5 102 0.33 0.2 0.25 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aac929 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0 0.05 0.02 0.01 0.25 10 10-3 10-2 10-1 FR4 PCB, mounting pad for cathode 1 cm Fig. 3. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac930 103 Zth(j-a) (K/W) duty cycle = 102 1 0.75 0.5 0.33 0.2 0 10 10-3 0.25 0.1 0.05 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA; pulsed; tp ≤ 300 µs; - 266 310 mV - 353 390 mV - 428 490 mV VR = 10 V; Tj = 25 °C - 28 50 µA VR = 20 V; Tj = 25 °C - 87 200 µA δ ≤ 0.02 ; Tj = 25 °C IF = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IR reverse current Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 31 40 pF trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 1.6 - ns - 565 - mV Tj = 25 °C VFRM peak forward recovery voltage IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C 006aad057 10 IF (A) 1 (1) (2) 006aac932 10-1 IR (A) 10-2 (1) (2) 10-3 10-1 10-4 (3) 10-2 (4) (5) (3) 10-5 10-6 10-3 10-4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF (V) 10-8 0 5 (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig. 5. (4) 10-7 Fig. 6. Forward current as a function of forward voltage; typical values PMEG2010BELD Product data sheet 15 VR (V) 20 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 4 August 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aac933 70 Cd (pF) 60 006aad058 0.8 PF(AV) (W) (4) 0.6 50 (3) (2) 40 (1) 0.4 30 20 0.2 10 0 Fig. 7. 0 5 10 15 VR (V) 0 20 0 0.5 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 8. 006aac935 1.2 PR(AV) (W) 1.0 IF(AV) (A) 1.5 Average forward power dissipation as a function of average forward current; typical values 006aad059 1.5 IF(AV) (A) 0.8 (1) 1.0 (1) (2) (3) (2) 0.4 (3) 0.5 (4) (4) 0.0 0 5 10 15 VR (V) 0 20 Tj = 125 °C Average reverse power dissipation as a function of reverse voltage; typical values PMEG2010BELD Product data sheet 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1 (DC) (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz Fig. 9. 0 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 10. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aad060 1.5 (1) IF(AV) (A) 1.0 (1) IF(AV) (A) 1.0 (2) (3) 0.5 0006aad061 1.5 (2) (3) 0.5 (4) (4) 0 0 25 50 75 100 125 0 150 175 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm Tj = 150 °C 0 25 50 75 100 125 150 175 Tamb (°C) Ceramic PCB, Al2O3, standard footprint 2 Tj = 150 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 12. Average forward current as a function of ambient temperature; typical values Fig. 11. Average forward current as a function of ambient temperature; typical values 006aad062 1.5 (1) IF(AV) (A) 1.0 (2) (3) 0.5 (4) 0 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 13. Average forward current as a function of solder point temperature; typical values PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 14. Reverse recovery definition IF time VF VFRM VF time 001aab912 Fig. 15. Forward recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.65 0.55 0.4 max 2 0.30 0.22 1.05 0.95 0.65 1 0.30 0.22 0.55 0.45 cathode marking on top side (if applicable) Dimensions in mm 12-05-01 Fig. 17. Package outline DFN1006D-2 (SOD882D) 13. Soldering 1.4 0.2 solder lands 0.8 (2×) 0.6 (2×) solder resist 0.7 (2×) solder paste Dimensions in mm 0.3 0.4 1 1.3 sod882d_fr Fig. 18. Reflow soldering footprint for DFN1006D-2 (SOD882D) PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG2010BELD v.2 20150804 Product data sheet - PMEG2010BELD v.1 Modifications: • PMEG2010BELD v.1 20120418 - - PMEG2010BELD Product data sheet Section Marking: updated figure 1. Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 14 PMEG2010BELD NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 August 2015 PMEG2010BELD Product data sheet All information provided in this document is subject to legal disclaimers. 4 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 14