DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • • • • • • Average forward current: IF(AV) ≤ 0.2 A Reverse voltage: VR ≤ 60 V Low forward voltage VF ≤ 600 mV AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm 3. Applications • • • • • LED backlight for mobile application Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 130 °C; [1] Min Typ Max Unit - - 0.2 A - - 0.2 A square wave δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave VR reverse voltage Tj = 25 °C - - 60 V VF forward voltage IF = 200 mA; pulsed; tp ≤ 300 µs; - 540 600 mV - 2 10 µA δ ≤ 0.02; Tj = 25 °C IR reverse current VR = 10 V; pulsed; tp ≤ 2 ms; δ ≤ 0.02; Tj = 25 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DFN1006D-2 (SOD882D) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG6002ELD Package Name Description Version DFN1006D-2 DFN1006D-2: leadless ultra small plastic package; 2 terminals SOD882D 7. Marking Table 4. Marking codes Type number Marking code PMEG6002ELD 1111 1010 CATHODE BAR READING DIRECTION VENDOR CODE READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac477 Fig. 1. SOD882D binary marking code description PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 2 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 60 V IF forward current Tsp ≤ 140 °C - 0.28 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 130 °C; - 0.2 A - 0.2 A [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 1 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 3 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 370 mW [3] - 735 mW [1] - 1090 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] [5] PMEG6002ELD Product data sheet Min Typ Max Unit [1][2] - - 340 K/W [1][3] - - 170 K/W [1][4] - - 115 K/W [5] - - 20 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 3 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-007593 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-007595 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.01 1 10-5 0.02 0 10-4 10-3 10-2 FR4 PCB, mounting pad for cathode 1 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 4 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-007596 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 0 0.01 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 mA; pulsed; tp ≤ 300 µs; - 130 170 mV - 190 230 mV - 260 300 mV - 410 470 mV - 540 600 mV - 2 10 µA - 20 100 µA - 310 - µA - 2 - mA δ ≤ 0.02; Tj = 25 °C IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IR reverse current VR = 10 V; pulsed; tp ≤ 2 ms; δ ≤ 0.02; Tj = 25 °C VR = 60 V; pulsed; tp ≤ 2 ms; δ ≤ 0.02; Tj = 25 °C VR = 10 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 100 °C VR = 60 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 100 °C Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 15 20 pF trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; - 4.5 - ns IR(meas) = 1 mA; Tj = 25 °C PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 5 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 006aaa765 103 006aaa766 5 IR 10 (µA) 104 IF (mA) 102 (1) (2) 103 (3) 102 10 10 (1) (2) (3) (4) (5) 1 (4) 1 10- 1 10- 2 10- 1 Fig. 5. 0 0.2 0.4 0.6 0.8 VF (V) 10- 3 1.0 (5) 0 20 (1) Tj = 150 °C (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 6. 006aaa767 30 40 Reverse current as a function of reverse voltage; typical values aaa-007597 0.20 PF(AV) (W) Cd (pF) 60 VR (V) (4) 0.16 (3) 20 0.12 (2) (1) 0.08 10 0.04 0 Fig. 7. 0 20 40 VR (V) 0 60 0 0.1 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1; f = 20 kHz (2) δ = 0.2; f = 20 kHz (3) δ = 0.5; f = 20 kHz (4) δ = 1 (DC) Fig. 8. PMEG6002ELD Product data sheet IF(AV) (A) 0.3 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 5 February 2014 0.2 © NXP N.V. 2014. All rights reserved 6 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-007598 0.5 PR(AV) (W) PR(AV) (W) (1) 0.4 aaa-007599 0.05 0.04 (2) (3) (1) 0.3 (2) (3) 0.03 (4) 0.2 0.02 (4) 0.1 0 Fig. 9. 0.01 0 20 40 VR (V) 0 60 0 20 40 Tj = 125 °C Tj = 85 °C (1) δ = 1 (DC) (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz (1) δ = 1 (DC) (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz Average reverse power dissipation as a function of reverse voltage; typical values aaa-007600 0.3 (1) IF(AV) (A) 0.2 aaa-007601 0.3 (1) 0.2 (3) 0.1 (2) (3) 0.1 (4) 0 0 60 Fig. 10. Average reverse power dissipation as a function of reverse voltage; typical values IF(AV) (A) (2) VR (V) (4) 25 50 75 100 125 0 150 175 Tamb (°C) FR4 PCB, standard footprint Tj = 150 °C 50 75 100 125 150 175 Tamb (°C) 2 (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 11. Average forward current as a function of ambient temperature; typical values Product data sheet 25 FR4 PCB, mounting pad for cathode 1 cm Tj = 150 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz PMEG6002ELD 0 Fig. 12. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 7 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-007602 0.3 (1) IF(AV) (A) 0.2 (1) IF(AV) (A) 0.2 (2) (3) 0.1 aaa-007603 0.3 (2) (3) 0.1 (4) 0 0 (4) 25 50 75 100 125 0 150 175 Tamb (°C) 0 25 50 75 Ceramic PCB, Al2O3, standard footprint Tj = 150 °C Tj = 150 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 13. Average forward current as a function of ambient temperature; typical values PMEG6002ELD Product data sheet 100 125 150 175 Tamb (°C) Fig. 14. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 8 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 11. Test information tr D.U.T. IF RS = 50 Ω tp 10 % t + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS mga881 (1) 90 % VR input signal output signal (1) IR = 1 mA Fig. 15. Reverse recovery time: test circuit and waveforms P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 9 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 12. Package outline 0.65 0.55 0.4 max 2 0.30 0.22 1.05 0.95 0.65 1 0.30 0.22 0.55 0.45 cathode marking on top side (if applicable) Dimensions in mm 12-05-01 Fig. 17. Package outline DFN1006D-2 (SOD882D) 13. Soldering 1.4 0.2 solder lands 0.8 (2×) 0.6 (2×) solder resist 0.7 (2×) solder paste Dimensions in mm 0.3 0.4 1 1.3 sod882d_fr Fig. 18. Reflow soldering footprint for DFN1006D-2 (SOD882D) PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 10 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG6002ELD v.3 20140205 Product data sheet - PMEG6002ELD v.2 Modifications: • PMEG6002ELD v.2 20131210 Product data sheet - PMEG6002ELD v.1 PMEG6002ELD v.1 20130503 Product data sheet - - PMEG6002ELD Product data sheet Table 7. Characteristics: IR conditions corrected All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 11 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PMEG6002ELD Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 12 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 13 / 14 PMEG6002ELD NXP Semiconductors 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 5 February 2014 PMEG6002ELD Product data sheet All information provided in this document is subject to legal disclaimers. 5 February 2014 © NXP N.V. 2014. All rights reserved 14 / 14