Data Sheet

CF
P1
5
PMEG045V100EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
4 December 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Average forward current: IF(AV) ≤ 10 A
Reverse voltage: VR ≤ 45 V
Extremely low forward voltage
High power capability due to clip-bonding technology and heat sink
Small and thin SMD power plastic package, typical height 0.78 mm
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C;
-
-
10
A
VR
reverse voltage
Tj = 25 °C
-
-
45
V
VF
forward voltage
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
-
420
490
mV
-
20
50
µA
-
250
600
µA
square wave
Tj = 25 °C; pulsed
IR
reverse current
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
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PMEG045V100EPD
NXP Semiconductors
45 V, 10 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
A
anode
2
A
anode
3
K
cathode
Simplified outline
Graphic symbol
A
A
K
1
3
aaa-009063
2
CFP15 (SOT1289)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PMEG045V100EPD
Name
Description
Version
CFP15
plastic, thermal enhanced ultra thin SMD package; 3 leads;
body: 5.8 x 4.3 x 0.78 mm
SOT1289
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG045V100EPD
045V 100E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
45
V
IF
forward current
Tsp = 155 °C; δ = 1
-
14
A
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C;
-
10
A
-
210
A
[1]
-
1.66
W
[2]
-
2.15
W
[3]
-
3.75
W
square wave
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
PMEG045V100EPD
Product data sheet
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45 V, 10 A low VF MEGA Schottky barrier rectifier
Symbol
Parameter
Tstg
storage temperature
[1]
[2]
[3]
Conditions
Min
Max
Unit
-65
175
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
102
Typ
Max
Unit
[1][2]
-
-
90
K/W
[1][3]
-
-
70
K/W
[1][4]
-
-
40
K/W
[5]
-
-
3
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
aaa-014542
duty cycle = 1
0.75
Zth(j-a)
(K/W)
Min
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
1
0.01
0
10-1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG045V100EPD
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PMEG045V100EPD
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45 V, 10 A low VF MEGA Schottky barrier rectifier
102
aaa-014543
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.5
0.33
10
0.2
0.25
0.1
0.05
1
0.02
0.01
0
10-1
10-3
10-2
10-1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-014544
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
10
0.33
0.2
0.5
0.25
0.1
0.05
0.02
1
0.01
0
10-1
10-3
10-2
10-1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG045V100EPD
Product data sheet
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45 V, 10 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms;
45
-
-
V
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
-
320
360
mV
-
340
-
mV
-
380
430
mV
-
420
490
mV
-
330
-
mV
-
15
-
µA
-
20
50
µA
-
60
-
µA
-
250
600
µA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
1190
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
400
-
pF
reverse recovery time
step recovery
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
-
37
-
ns
reverse recovery time
ramp recovery
dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
-
17
-
ns
peak forward recovery
voltage
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
-
308
-
mV
VF
δ ≤ 0.12; pulsed
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 125 °C; pulsed
IR
reverse current
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
Cd
trr
trr
VFRM
diode capacitance
PMEG045V100EPD
Product data sheet
Tj = 25 °C
VR = 26 V
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45 V, 10 A low VF MEGA Schottky barrier rectifier
aaa-014545
102
IR
(A)
IF
(A)
(1)
10
aaa-014546
10-1
10-2
10-3
(2)
(3)
(4)
(4)
(1)
(5)
10-5
(5)
(6)
10-6
(7)
10-1
10-7
(6)
10-8
0
0.2
0.4
0.6
VF (V)
10-9
0.8
0
10
20
pulsed condition
(1) Tj = 175 °C
pulsed condition
(1) Tj = 150 °C
(2) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 125 °C
(3) Tj = 100 °C
(4) Tj = 100 °C
(4) Tj = 85 °C
(5) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = 25 °C
(6) Tj = −40 °C
(7) Tj = −40 °C
Fig. 4.
(2)
10-4
1
10-2
(3)
Fig. 5.
aaa-014547
40
PF(AV)
(W)
2.0
50
aaa-014548
6
Cd
(nF)
VR (V)
Reverse current as a function of reverse
voltage; typical values
Forward current as a function of forward
voltage; typical values
2.5
30
(4)
(5)
(3)
4
(2)
1.5
(1)
1.0
2
0.5
0
Fig. 6.
0
9
18
27
36
VR (V)
0
45
0
f = 1 MHz; Tamb = 25 °C
Tj = 100 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1
Fig. 7.
PMEG045V100EPD
Product data sheet
10
IF(AV) (A)
15
Average forward power dissipation as a
function of average forward current; typical
values
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45 V, 10 A low VF MEGA Schottky barrier rectifier
aaa-014549
1.4
PR(AV)
(W)
1.2
IF(AV)
(A)
8
1.0
(1)
(1)
(2)
0.8
6
(3)
4
(4)
0.4
(4)
2
0.2
(5)
0
9
18
27
36
VR (V)
0
45
Tj = 100 °C
50
100
150
200
Tamb (°C)
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Average reverse power dissipation as a
function of reverse voltage; typical values
aaa-014551
10
IF(AV)
(A)
0
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(5) δ = 0.2
Fig. 8.
(2)
(3)
0.6
0
aaa-014550
10
Fig. 9.
Average forward current as a function of
ambient temperature; typical values
aaa-014552
15
(1)
IF(AV)
(A)
8
(2)
(1)
10
(2)
6
(3)
(4)
4
(3)
5
(4)
2
0
0
50
100
0
150
200
Tamb (°C)
FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C
Product data sheet
100
150
200
Tamb (°C)
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
PMEG045V100EPD
50
Ceramic PCB, Al2O3, standard footprint
2
Fig. 10. Average forward current as a function of
ambient temperature; typical values
0
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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45 V, 10 A low VF MEGA Schottky barrier rectifier
aaa-014553
15
(1)
IF(AV)
(A)
10
(2)
(3)
5
(4)
0
0
50
100
150
Tsp (°C)
200
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
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45 V, 10 A low VF MEGA Schottky barrier rectifier
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 13. Reverse recovery definition; step recovery
IF
dlF
dt
trr
time
25 %
100 %
Qr
IR
IRM
003aac562
Fig. 14. Reverse recovery definition; ramp recovery
IF
time
VF
VFRM
VF
time
001aab912
Fig. 15. Forward recovery definition
PMEG045V100EPD
Product data sheet
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45 V, 10 A low VF MEGA Schottky barrier rectifier
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 16. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
4.4
4.2
2.13
1.3
1.1
0.45
0.25
2
4.8
4.4
0.82
0.74
1
1.3
0.9
5.9
5.7
4.2
3.8
3
2.15
1.95
Dimensions in mm
0.45
0.25
3.5
3.1
6.6
6.4
0.24
0.16
14-10-13
Fig. 17. Package outline CFP15 (SOT1289)
PMEG045V100EPD
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45 V, 10 A low VF MEGA Schottky barrier rectifier
13. Soldering
Footprint information for reflow soldering of CFP15 package
SOT1289
4.6
3.73
1.4 (2×)
1.8 (2×)
1.6 (2×)
2.13
1.64 1.44 1.34
0.6 0.4
0.11
1.9
7.5
1.02
5.16 4.96
0.2
1.9
occupied area
solder resist
solder lands
solder paste
Issue date
13-08-28
14-03-12
0.2
0.05
0.6
1.7 (4×)
0.2
2.4
3.8
4
Dimensions in mm
sot1289_fr
Fig. 18. Reflow soldering footprint for CFP15 (SOT1289)
PMEG045V100EPD
Product data sheet
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45 V, 10 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change
notice
Supersedes
PMEG045V100EPD v.2
20141204
Product data sheet
-
PMEG045V100EPD v.1
Modifications:
•
PMEG045V100EPD v.1
20140704
-
-
PMEG045V100EPD
Product data sheet
Product status changed
Preliminary data sheet
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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PMEG045V100EPD
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
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PMEG045V100EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
14 / 15
PMEG045V100EPD
NXP Semiconductors
45 V, 10 A low VF MEGA Schottky barrier rectifier
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................3
10
Characteristics ....................................................... 5
11
11.1
Test information ..................................................... 9
Quality information ............................................. 10
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 December 2014
PMEG045V100EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
15 / 15