CF P1 5 PMEG045T150EPD 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 2 September 2015 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • Average forward current: IF(AV) ≤ 15 A Reverse voltage: VR ≤ 45 V Low forward voltage Low leakage current due to Trench MEGA Schottky technology High power capability due to clip-bonding technology and heat sink Small and thin SMD power plastic package, typical height 0.78 mm AEC-Q101 qualified 3. Applications • • • • • High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; - - 15 A VR reverse voltage Tj = 25 °C - - 45 V VF forward voltage IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02; - 480 550 mV - 16 50 µA - 30 100 µA square wave Tj = 25 °C; pulsed IR reverse current VR = 10 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed VR = 45 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed Scan or click this QR code to view the latest information for this product PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 A anode 3 K cathode Simplified outline Graphic symbol A A K 1 3 aaa-009063 2 CFP15 (SOT1289) 6. Ordering information Table 3. Ordering information Type number PMEG045T150EPD Package Name Description Version CFP15 plastic, thermal enhanced ultra thin SMD package; 3 leads; body: 5.8 x 4.3 x 0.78 mm SOT1289 7. Marking Table 4. Marking codes Type number Marking code PMEG045T150EPD 045T 150E PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 45 V IF forward current Tsp = 140 °C; δ = 1 - 21 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 145 °C; - 15 A - 210 A [1] - 1.66 W [2] - 2.15 W [3] - 3.5 W square wave IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] [5] PMEG045T150EPD Product data sheet Min Typ Max Unit [1][2] - - 90 K/W [1][3] - - 70 K/W [1][4] - - 42 K/W [5] - - 3 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier aaa-016220 102 0.75 Zth(j-a) (K/W) duty cycle = 1 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 1 0.01 0 10-1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-016221 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.33 0.2 10 0.5 0.25 0.1 0.05 0.02 1 0.01 10-1 10-3 0 10-2 10-1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier aaa-016222 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.33 10 0.2 0.5 0.25 0.1 0.05 0.02 1 0.01 10-1 10-3 0 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms; 45 - - V forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; - 320 380 mV - 390 460 mV - 440 - mV - 480 550 mV - 405 - mV - 12 - µA - 16 50 µA - 30 100 µA - 22 - mA VR = 1 V; f = 1 MHz; Tj = 25 °C - 2200 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 800 - pF reverse recovery time step recovery IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 60 - ns reverse recovery time ramp recovery dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A; - 20 - ns peak forward recovery voltage IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 305 - mV VF δ ≤ 0.12; pulsed Tj = 25 °C; pulsed IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 125 °C; pulsed IR reverse current VR = 5 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed VR = 10 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed VR = 45 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed VR = 45 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 125 °C; pulsed Cd trr trr VFRM diode capacitance PMEG045T150EPD Product data sheet Tj = 25 °C VR = 26 V All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier aaa-016223 102 IR (A) IF (A) aaa-016224 10-1 10-2 (1) 10 10-3 (2) (3) 10-4 (4) (2) (1) (3) (4) (5) 10-5 1 (5) (6) (7) 10-6 10-1 10-7 (6) 10-8 10-2 0 0.2 0.4 0.6 VF (V) 10-9 0.8 10 20 pulsed condition (1) Tj = 175 °C pulsed condition (1) Tj = 150 °C (2) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 125 °C (3) Tj = 100 °C (4) Tj = 100 °C (4) Tj = 85 °C (5) Tj = 85 °C (5) Tj = 25 °C (6) Tj = 25 °C (6) Tj = −40 °C (7) Tj = −40 °C Fig. 4. 0 Fig. 5. aaa-016225 40 VR (V) 50 Reverse current as a function of reverse voltage; typical values Forward current as a function of forward voltage; typical values 3.5 Cd (nF) 3.0 30 aaa-016226 12 (5) PF(AV) (W) 2.5 (4) (3) 8 (2) 2.0 (1) 1.5 4 1.0 0.5 0 Fig. 6. 0 10 20 30 40 VR (V) 0 50 0 f = 1 MHz; Tamb = 25 °C Tj = 100 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 0.8 (5) δ = 1 Fig. 7. PMEG045T150EPD Product data sheet 16 IF(AV) (A) 24 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 2 September 2015 8 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier aaa-016227 0.25 PR(AV) (W) IF(AV) (A) (1) 0.20 aaa-016228 10 7.5 (2) (1) (3) 0.15 (2) 5.0 0.10 (3) (4) (4) 2.5 0.05 (5) 0 0 15 30 VR (V) 0 45 Tj = 100 °C 100 150 200 Tamb (°C) (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Average reverse power dissipation as a function of reverse voltage; typical values aaa-016229 10 IF(AV) (A) 50 FR4 PCB, standard footprint Tj = 175 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 (5) δ = 0.2 Fig. 8. 0 Fig. 9. Average forward current as a function of ambient temperature; typical values aaa-016230 15 IF(AV) (A) (1) 7.5 (1) 10 (2) (2) 5.0 (3) (3) (4) 5 (4) 2.5 0 0 50 100 0 150 200 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm Tj = 175 °C Product data sheet 100 150 200 Tamb (°C) Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz PMEG045T150EPD 50 Ceramic PCB, Al2O3, standard footprint 2 Fig. 10. Average forward current as a function of ambient temperature; typical values 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier aaa-016231 25 IF(AV) (A) (1) 20 15 (2) 10 (3) (4) 5 0 0 50 100 150 Tsp (°C) 200 Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition; step recovery PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier IF dlF dt trr time 25 % 100 % Qr IR IRM 003aac562 Fig. 14. Reverse recovery definition; ramp recovery IF time VF VFRM VF time 001aab912 Fig. 15. Forward recovery definition P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 4.4 4.2 2.13 1.3 1.1 0.45 0.25 2 4.8 4.4 0.82 0.74 1.3 0.9 1 5.9 5.7 4.2 3.8 0.45 0.25 3 2.15 1.95 0.24 0.16 3.5 3.1 Dimensions in mm 6.6 6.4 14-10-13 Fig. 17. Package outline CFP15 (SOT1289) 13. Soldering Footprint information for reflow soldering of CFP15 package SOT1289 4.6 3.73 1.4 (2×) 1.8 (2×) 1.6 (2×) 2.13 1.64 1.44 1.34 0.6 0.4 0.11 1.9 7.5 1.02 5.16 4.96 0.2 1.9 occupied area solder resist solder lands solder paste Issue date 13-08-28 14-03-12 0.2 0.05 0.6 1.7 (4×) 0.2 2.4 3.8 4 Dimensions in mm sot1289_fr Fig. 18. Reflow soldering footprint for CFP15 (SOT1289) PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG045T150EPD v.1 20150902 Product data sheet - - PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 15 PMEG045T150EPD NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 11 12 Package outline ................................................... 11 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 September 2015 PMEG045T150EPD Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15