English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
IHM-B模块采用软特性的沟槽栅IGBT4
IHM-Bmodulewithsoft-switchingTrench-IGBT4
初步数据/PreliminaryData
VCES = 1200V
IC nom = 2400A / ICRM = 4800A
典型应用
• 大功率变流器
• 电机传动
• 风力发电机
TypicalApplications
• HighPowerConverters
• MotorDrives
• WindTurbines
电气特性
• 提高工作结温Tvjop
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
机械特性
• 4kV交流1分钟绝缘
• 封装的CTI>400
• 高功率密度
• IHMB封装
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighPowerDensity
• IHMBHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
2400
3460
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
4800
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
12,5
kW
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 2400 A, VGE = 15 V
IC = 2400 A, VGE = 15 V
IC = 2400 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 91,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,70
2,00
2,10
2,05
V
V
V
VGEth
5,1
5,8
6,5
V
VGE = -15 V ... +15 V
QG
18,5
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,81
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
150
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
8,30
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,50
0,54
0,55
µs
µs
µs
tr
0,33
0,33
0,33
µs
µs
µs
td off
1,05
1,15
1,20
µs
µs
µs
tf
0,20
0,23
0,24
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 2400 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 2400 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 2400 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 2400 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 2400 A, VCE = 600 V, LS = 54 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 6250 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,6 Ω
Tvj = 150°C
Eon
365
460
505
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 2400 A, VCE = 600 V, LS = 54 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 0,3 Ω
Tvj = 150°C
Eoff
450
560
595
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
9,75
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
2
tP ≤ 10 µs, Tvj = 150°C
9600
A
12,0 K/kW
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
2400
A
IFRM
4800
A
I²t
615
595
特征值/CharacteristicValues
min.
typ.
max.
1,80
1,75
1,70
2,35
kA²s
kA²s
正向电压
Forwardvoltage
IF = 2400 A, VGE = 0 V
IF = 2400 A, VGE = 0 V
IF = 2400 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 2400 A, - diF/dt = 6250 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
805
1150
1200
A
A
A
恢复电荷
Recoveredcharge
IF = 2400 A, - diF/dt = 6250 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
245
430
490
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 2400 A, - diF/dt = 6250 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
105
185
210
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
11,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
3
V
V
V
20,0 K/kW
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
32,0
32,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
19,0
19,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
min.
typ.
max.
LsCE
9,0
nH
RCC'+EE'
0,13
mΩ
Tstg
-40
150
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
4,25
-
5,75
Nm
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
1,7
-
2,1
Nm
M
8,0
-
10
Nm
重量
Weight
G
1300
g
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
4800
4800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
4200
4200
3000
3000
IC [A]
3600
IC [A]
3600
2400
2400
1800
1800
1200
1200
600
600
0
VGE =19 V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.6Ω,RGoff=0.3Ω,VCE=600V
4800
2000
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
4200
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
1800
1600
3600
1400
3000
IC [A]
E [mJ]
1200
2400
1000
800
1800
600
1200
400
600
0
200
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
5
0
800
1600
2400
IC [A]
3200
4000
4800
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=2400A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
2500
100
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
2000
ZthJC : IGBT
10
E [mJ]
ZthJC [K/kW]
1500
1000
1
500
i:
1
2
3
4
ri[K/kW]: 0,5553 1,0596 9,5528 0,7923
τi[s]:
0,0006 0,0096 0,0489 1,9537
0
0,0
1,5
3,0
4,5
6,0
0,1
0,001
7,5
0,01
0,1
t [s]
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=0.3Ω,Tvj=150°C
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
5600
4800
Ic, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
4200
4800
3600
4000
3000
IF [A]
IC [A]
3200
2400
2400
1800
1600
1200
800
0
600
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
6
0,0
0,3
0,6
0,9
1,2
VF [V]
1,5
1,8
2,1
2,4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.6Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=2400A,VCE=600V
300
240
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
220
250
200
180
200
160
E [mJ]
E [mJ]
140
150
120
100
100
80
60
50
40
20
0
0
800
1600
2400
IF [A]
3200
4000
0
4800
100
ZthJC [K/kW]
ZthJC : Diode
10
i:
1
2
3
4
ri[K/kW]: 1,5153 2,0285 15,0456 1,2539
τi[s]:
0,0004 0,0077 0,0418 0,7107
0,01
0,1
t [s]
1,5
3,0
4,5
RG [Ω]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
0,001
0,0
1
10
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
7
6,0
7,5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FZ2400R12HP4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
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preparedby:WB
dateofpublication:2013-11-11
approvedby:PL
revision:2.2
9