技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 IHM-B模块采用软特性的沟槽栅IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1200V IC nom = 2400A / ICRM = 4800A 典型应用 • 大功率变流器 • 电机传动 • 风力发电机 TypicalApplications • HighPowerConverters • MotorDrives • WindTurbines 电气特性 • 提高工作结温Tvjop ElectricalFeatures • ExtendedOperationTemperatureTvjop 机械特性 • 4kV交流1分钟绝缘 • 封装的CTI>400 • 高功率密度 • IHMB封装 MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighPowerDensity • IHMBHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 2400 3550 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 4800 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 13,5 kW 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 2400 A, VGE = 15 V IC = 2400 A, VGE = 15 V IC = 2400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 91,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,70 2,00 2,10 2,05 V V V VGEth 5,1 5,8 6,5 V VGE = -15 V ... +15 V QG 18,5 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,98 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 150 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 8,30 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA td on 0,50 0,54 0,55 µs µs µs tr 0,33 0,33 0,33 µs µs µs td off 1,05 1,15 1,20 µs µs µs tf 0,20 0,23 0,24 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 2400 A, VCE = 600 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 2400 A, VCE = 600 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 2400 A, VCE = 600 V VGE = ±15 V RGoff = 0,22 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 2400 A, VCE = 600 V VGE = ±15 V RGoff = 0,22 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 2400 A, VCE = 600 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, di/dt = 6250 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,5 Ω Tvj = 150°C Eon 365 460 505 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 2400 A, VCE = 600 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 0,22 Ω Tvj = 150°C Eoff 450 560 595 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 6,50 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 2 tP ≤ 10 µs, Tvj = 150°C 9600 A 11,0 K/kW K/kW 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 1200 V IF 2400 A IFRM 4800 A I²t 750 725 特征值/CharacteristicValues min. typ. max. 1,80 1,75 1,70 2,35 kA²s kA²s 正向电压 Forwardvoltage IF = 2400 A, VGE = 0 V IF = 2400 A, VGE = 0 V IF = 2400 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 2400 A, - diF/dt = 6250 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 805 1150 1200 A A A 恢复电荷 Recoveredcharge IF = 2400 A, - diF/dt = 6250 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 245 430 490 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 2400 A, - diF/dt = 6250 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 105 185 210 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 7,20 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 3 V V V 17,5 K/kW K/kW 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 爬电距离 Creepagedistance VISOL 4,0 kV Cu Al2O3 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 32,0 32,0 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 19,0 19,0 mm 相对电痕指数 Comperativetrackingindex CTI > 400 min. typ. max. LsCE 6,0 nH RCC'+EE' 0,10 mΩ Tstg -40 150 °C 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote 1,7 - 2,1 Nm M 8,0 - 10 Nm 重量 Weight G 1900 g preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 4800 4800 Tvj = 25°C Tvj = 125°C Tvj = 150°C 4200 4200 3000 3000 IC [A] 3600 IC [A] 3600 2400 2400 1800 1800 1200 1200 600 600 0 VGE =19 V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.5Ω,RGoff=0.22Ω,VCE=600V 4800 2000 Tvj = 25°C Tvj = 125°C Tvj = 150°C 4200 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 1800 1600 3600 1400 3000 IC [A] E [mJ] 1200 2400 1000 800 1800 600 1200 400 600 0 200 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 5 0 800 1600 2400 IC [A] 3200 4000 4800 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=2400A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2500 100 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 2000 ZthJC : IGBT 10 E [mJ] ZthJC [K/kW] 1500 1000 1 500 i: 1 2 3 4 ri[K/kW]: 0,7907 8,3195 1,1534 0,3981 τi[s]: 0,001 0,0362 0,1587 3,3483 0 0,0 1,5 3,0 4,5 6,0 0,1 0,001 7,5 0,01 0,1 t [s] RG [Ω] 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=0.22Ω,Tvj=150°C 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 5600 4800 Ic, Modul IC, Chip Tvj = 25°C Tvj = 125°C Tvj = 150°C 4200 4800 3600 4000 3000 IF [A] IC [A] 3200 2400 2400 1800 1600 1200 800 0 600 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 6 0,0 0,3 0,6 0,9 1,2 VF [V] 1,5 1,8 2,1 2,4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.5Ω,VCE=600V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=2400A,VCE=600V 300 240 Erec, Tvj = 125°C Erec, Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C 220 250 200 180 200 160 E [mJ] E [mJ] 140 150 120 100 100 80 60 50 40 20 0 0 800 1600 2400 IF [A] 3200 4000 0 4800 100 ZthJC [K/kW] ZthJC : Diode 10 i: 1 2 3 4 ri[K/kW]: 1,4568 2,3068 12,5404 0,8175 τi[s]: 0,0004 0,0079 0,039 0,8169 0,01 0,1 t [s] 1,5 3,0 4,5 RG [Ω] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 0,001 0,0 1 10 preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 7 6,0 7,5 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 接线图/circuit_diagram_headline 封装尺寸/packageoutlines preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 8 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ2400R12HP4_B9 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:WB dateofpublication:2013-11-11 approvedby:PL revision:2.4 9