技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 PrimePACK™2模块带有温度检测NTC PrimePACK™2moduleandNTC VCES = 1700V IC nom = 650A / ICRM = 1300A 典型应用 • 三电平应用 • 辅助逆变器 • 大功率变流器 • 电机传动 • 风力发电机 TypicalApplications • 3-Level-Applications • AuxiliaryInverters • HighPowerConverters • MotorDrives • WindTurbines 电气特性 • 提高工作结温Tvjop • 高直流电压稳定性 • 高电流密度 • 低开关损耗 • Tvjop=150°C • 低VCEsat ElectricalFeatures • ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • Tvjop=150°C • LowVCEsat 机械特性 • 封装的CTI>400 • 高爬电距离和电气间隙 • 高功率循环和温度循环能力 • 高功率密度 • 铜基板 • 标封装 MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • HighPowerandThermalCyclingCapability • HighPowerDensity • CopperBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 650 930 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1300 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 4,15 kW 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 650 A, VGE = 15 V IC = 650 A, VGE = 15 V IC = 650 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 2,00 2,35 2,45 2,45 2,80 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 7,00 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 2,3 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 54,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,70 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA td on 0,55 0,60 0,60 µs µs µs tr 0,09 0,11 0,12 µs µs µs td off 1,00 1,25 1,30 µs µs µs tf 0,29 0,49 0,57 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGoff = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 650 A, VCE = 900 V VGE = ±15 V RGoff = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 650 A, VCE = 900 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,8 Ω Tvj = 150°C Eon 205 300 320 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 650 A, VCE = 900 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 2,7 Ω Tvj = 150°C Eoff 140 205 230 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 14,0 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 2 tP ≤ 10 µs, Tvj = 150°C 2700 A 36,0 K/kW K/kW 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C 最大损耗功率 Maximumpowerdissipation Tvj = 125°C VRRM 1700 V IF 650 A IFRM 1300 A I²t 70,5 kA²s PRQM 650 kW 特征值/CharacteristicValues min. typ. max. 1,85 1,95 1,95 2,25 2,35 正向电压 Forwardvoltage IF = 650 A, VGE = 0 V IF = 650 A, VGE = 0 V IF = 650 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 695 760 805 A A A 恢复电荷 Recoveredcharge IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 160 265 310 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 76,0 135 160 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 27,0 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW V V V 71,5 K/kW K/kW °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 3 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 爬电距离 Creepagedistance VISOL 4,0 kV Cu Al2O3 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 33,0 33,0 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 19,0 19,0 mm 相对电痕指数 Comperativetrackingindex CTI > 400 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque min. typ. RthCH 4,50 LsCE 18 nH RCC'+EE' 0,30 mΩ Tstg -40 150 °C 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote 1,8 - 2,1 Nm M 8,0 - 10 Nm 重量 Weight G 825 g preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 4 max. K/kW 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 1300 1300 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1200 1100 1100 900 900 800 800 700 700 IC [A] 1000 IC [A] 1000 600 600 500 500 400 400 300 300 200 200 100 100 0 0,0 0,5 1,0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 1200 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.8Ω,RGoff=2.7Ω,VCE=900V 1300 550 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1200 1100 Eon, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C Eoff, Tvj = 125°C 500 450 1000 400 900 350 700 E [mJ] IC [A] 800 600 500 300 250 200 400 150 300 100 200 50 100 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 5 0 200 400 600 800 IC [A] 1000 1200 5,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=650A,VCE=900V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 1000 100 Eon, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C Eoff, Tvj = 125°C 900 800 ZthJC : IGBT 700 10 ZthJC [K/kW] E [mJ] 600 500 400 1 300 200 i: 1 2 3 4 ri[K/kW]: 1,2 5,5 25,5 3,8 τi[s]: 0,0008 0,013 0,05 0,6 100 0 0 2 4 6 8 10 12 0,1 0,001 14 0,01 0,1 t [s] RG [Ω] 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=2.7Ω,Tvj=150°C 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1400 1300 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C Tvj = 150°C 1200 1200 1100 1000 1000 900 800 IF [A] IC [A] 800 600 700 600 500 400 400 300 200 200 100 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.8Ω,VCE=900V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=650A,VCE=900V 220 220 Erec, Tvj = 150°C Erec, Tvj = 125°C 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 200 400 Erec, Tvj = 150°C Erec, Tvj = 125°C 200 E [mJ] E [mJ] 200 600 IF [A] 800 1000 0 1200 0 2 4 6 8 10 12 14 RG [Ω] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 安全工作区二极管,逆变器(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=150°C 1000 ZthJC : Diode 1400 IR, Modul 1200 1000 IR [A] ZthJC [K/kW] 100 800 600 10 400 i: 1 2 3 4 ri[K/kW]: 4,5 17 45 5 τi[s]: 0,0008 0,013 0,05 0,6 1 0,001 0,01 0,1 t [s] 1 200 0 10 preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 7 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 8 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 接线图/circuit_diagram_headline 封装尺寸/packageoutlines preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 9 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF650R17IE4 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:TA dateofpublication:2013-11-05 approvedby:PL revision:3.3 10