技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 EasyPACK模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有pressfit压接管脚和温度检测NTC EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC 初步数据/PreliminaryData J VCES = 650V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 • UPS系统 TypicalApplications • 3-Level-Applications • SolarApplications • UPSSystems 电气特性 • 增加阻断电压至650V • 低电感设计 • 低开关损耗 • 低VCEsat ElectricalFeatures • Increasedblockingvoltagecapabilityto650V • Lowinductivedesign • LowSwitchingLosses • LowVCEsat 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 紧凑型设计 • PressFIT压接技术 • 集成的安装夹使安装坚固 MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 650 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 75°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 75 95 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 250 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 1,20 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,45 1,60 1,70 1,90 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,80 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 4,60 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,145 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA td on 0,025 0,025 0,025 µs µs µs tr 0,02 0,023 0,024 µs µs µs td off 0,20 0,225 0,23 µs µs µs tf 0,085 0,12 0,14 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGon = 5,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGon = 5,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGoff = 5,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGoff = 5,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 75 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 3100 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 5,1 Ω Tvj = 150°C Eon 0,45 0,60 0,70 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 75 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 5,1 Ω Tvj = 150°C Eoff 1,70 2,30 2,40 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 530 380 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,55 0,60 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,55 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 2 tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 75 A IFRM 150 A I²t 490 460 特征值/CharacteristicValues min. typ. max. 1,55 1,50 1,45 1,95 A²s A²s 正向电压 Forwardvoltage IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 75 A, - diF/dt = 3600 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 95,0 105 110 A A A 恢复电荷 Recoveredcharge IF = 75 A, - diF/dt = 3600 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 3,70 6,40 7,00 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 75 A, - diF/dt = 3600 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,90 1,50 1,75 mJ mJ mJ V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,70 0,80 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,70 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 3 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 二极管,D5-D6/Diode,D5-D6 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 75 A IFRM 150 A I²t 1500 1400 特征值/CharacteristicValues min. typ. max. 1,45 1,35 1,30 1,85 A²s A²s 正向电压 Forwardvoltage IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 75 A, - diF/dt = 3100 A/µs (Tvj=150°C) VR = 300 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 82,0 100 105 A A A 恢复电荷 Recoveredcharge IF = 75 A, - diF/dt = 3100 A/µs (Tvj=150°C) VR = 300 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 3,70 7,00 8,00 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 75 A, - diF/dt = 3100 A/µs (Tvj=150°C) VR = 300 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 1,00 1,80 2,05 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,60 0,65 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,50 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW V V V °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 10,0 5,0 mm 相对电痕指数 Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 15 nH RCC'+EE' 2,00 mΩ Tstg -40 125 °C Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 - 80 N 重量 Weight G 39 g 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 25 A rms per connector pin preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 5 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 150 150 Tvj = 25°C Tvj = 125°C Tvj = 150°C 120 120 105 105 90 90 75 60 45 45 30 30 15 15 0,0 0,4 0,8 1,2 1,6 VCE [V] 2,0 2,4 0 2,8 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 5,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 135 105 3,5 90 3,0 E [mJ] 4,0 75 2,5 60 2,0 45 1,5 30 1,0 15 0,5 5 6 7 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 4,5 120 0 0,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=5.1Ω,RGoff=5.1Ω,VCE=300V 150 IC [A] 75 60 0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 135 IC [A] IC [A] 135 8 9 VGE [V] 10 11 0,0 12 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 6 0 15 30 45 60 75 90 IC [A] 105 120 135 150 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=75A,VCE=300V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 10 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 9 8 ZthJH : IGBT 7 1 ZthJH [K/W] E [mJ] 6 5 4 0,1 3 2 i: 1 2 3 4 ri[K/W]: 0,051 0,117 0,426 0,506 τi[s]: 0,0005 0,005 0,05 0,2 1 0 0 5 10 15 20 25 30 RG [Ω] 35 40 45 50 0,01 0,001 55 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=5.1Ω,Tvj=150°C 1 10 150 IC, Modul IC, Chip 150 Tvj = 25°C Tvj = 125°C Tvj = 150°C 135 135 120 120 105 105 90 90 IF [A] IC [A] 0,1 t [s] 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 165 75 75 60 60 45 45 30 30 15 15 0 0,01 0 100 200 300 400 500 VCE [V] 600 700 0 800 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 7 0,0 0,4 0,8 1,2 VF [V] 1,6 2,0 2,4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=5.1Ω,VCE=300V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=75A,VCE=300V 4,0 3,0 Erec, Tvj = 125°C Erec, Tvj = 150°C 3,5 Erec, Tvj = 125°C Erec, Tvj = 150°C 2,5 3,0 2,0 E [mJ] E [mJ] 2,5 2,0 1,5 1,5 1,0 1,0 0,5 0,5 0,0 0 15 30 45 60 75 90 IF [A] 0,0 105 120 135 150 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 5 10 15 20 25 30 RG [Ω] 35 40 45 50 55 正向偏压特性二极管,D5-D6（典型) forwardcharacteristicofDiode,D5-D6(typical) IF=f(VF) 10 150 ZthJH : Diode Tvj = 25°C Tvj = 125°C Tvj = 150°C 135 120 105 IF [A] ZthJH [K/W] 90 1 75 60 45 30 i: 1 2 3 4 ri[K/W]: 0,097 0,219 0,576 0,508 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 15 0 10 0,0 0,4 0,8 1,2 VF [V] preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 8 1,6 2,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 开关损耗二极管,D5-D6（典型) switchinglossesDiode,D5-D6(typical) Erec=f(IF) RGon=5.1Ω,VCE=300V 开关损耗二极管,D5-D6（典型) switchinglossesDiode,D5-D6(typical) Erec=f(RG) IF=75A,VCE=300V 4,0 3,0 Erec, Tvj = 125°C Erec, Tvj = 150°C 3,5 Erec, Tvj = 125°C Erec, Tvj = 150°C 2,7 2,4 3,0 2,1 1,8 E [mJ] E [mJ] 2,5 2,0 1,5 1,2 1,5 0,9 1,0 0,6 0,5 0,0 0,3 0 15 30 45 60 75 90 IF [A] 0,0 105 120 135 150 瞬态热阻抗二极管,D5-D6 transientthermalimpedanceDiode,D5-D6 ZthJH=f(t) 0 5 10 15 20 25 30 RG [Ω] 35 40 45 50 55 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 10 100000 ZthJH : Diode Rtyp 10000 R[Ω] ZthJH [K/W] 1 0,1 1000 i: 1 2 3 4 ri[K/W]: 0,062 0,145 0,444 0,449 τi[s]: 0,0005 0,005 0,05 0,2 0,01 0,001 0,01 0,1 t [s] 1 100 10 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 9 0 20 40 60 80 100 TC [°C] 120 140 160 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines In fin e o n preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R07W2E3_B11 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.1 11