English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
EasyPACK模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有pressfit压接管脚和温度检测NTC
EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC
初步数据/PreliminaryData
J
VCES = 650V
IC nom = 75A / ICRM = 150A
典型应用
• 三电平应用
• 太阳能应用
• UPS系统
TypicalApplications
• 3-Level-Applications
• SolarApplications
• UPSSystems
电气特性
• 增加阻断电压至650V
• 低电感设计
• 低开关损耗
• 低VCEsat
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• Lowinductivedesign
• LowSwitchingLosses
• LowVCEsat
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 紧凑型设计
• PressFIT压接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 75°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
75
95
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
150
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
250
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 1,20 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,45
1,60
1,70
1,90
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,80
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
4,60
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,145
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,025
0,025
0,025
µs
µs
µs
tr
0,02
0,023
0,024
µs
µs
µs
td off
0,20
0,225
0,23
µs
µs
µs
tf
0,085
0,12
0,14
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGon = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGon = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGoff = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 75 A, VCE = 300 V
VGE = ±15 V
RGoff = 5,1 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 75 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3100 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 5,1 Ω
Tvj = 150°C
Eon
0,45
0,60
0,70
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 75 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 5,1 Ω
Tvj = 150°C
Eoff
1,70
2,30
2,40
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
530
380
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,55
0,60 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,55
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
2
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
75
A
IFRM
150
A
I²t
490
460
特征值/CharacteristicValues
min.
typ.
max.
1,55
1,50
1,45
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
95,0
105
110
A
A
A
恢复电荷
Recoveredcharge
IF = 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
3,70
6,40
7,00
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,90
1,50
1,75
mJ
mJ
mJ
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,70
0,80 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,70
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
3
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
二极管,D5-D6/Diode,D5-D6
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
75
A
IFRM
150
A
I²t
1500
1400
特征值/CharacteristicValues
min.
typ.
max.
1,45
1,35
1,30
1,85
A²s
A²s
正向电压
Forwardvoltage
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 75 A, - diF/dt = 3100 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
82,0
100
105
A
A
A
恢复电荷
Recoveredcharge
IF = 75 A, - diF/dt = 3100 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
3,70
7,00
8,00
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 75 A, - diF/dt = 3100 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
1,00
1,80
2,05
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,60
0,65 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,50
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
5,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
VISOL kV
2,5
min.
typ.
max.
LsCE
15
nH
RCC'+EE'
2,00
mΩ
Tstg
-40
125
°C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
-
80
N
重量
Weight
G
39
g
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt
The current under continuous operation is limited to 25 A rms per connector pin
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
150
150
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
120
120
105
105
90
90
75
60
45
45
30
30
15
15
0,0
0,4
0,8
1,2
1,6
VCE [V]
2,0
2,4
0
2,8
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
5,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
105
3,5
90
3,0
E [mJ]
4,0
75
2,5
60
2,0
45
1,5
30
1,0
15
0,5
5
6
7
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
4,5
120
0
0,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=5.1Ω,RGoff=5.1Ω,VCE=300V
150
IC [A]
75
60
0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
135
IC [A]
IC [A]
135
8
9
VGE [V]
10
11
0,0
12
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
6
0
15
30
45
60
75 90
IC [A]
105 120 135 150
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=75A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
10
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
9
8
ZthJH : IGBT
7
1
ZthJH [K/W]
E [mJ]
6
5
4
0,1
3
2
i:
1
2
3
4
ri[K/W]: 0,051 0,117 0,426 0,506
τi[s]:
0,0005 0,005 0,05 0,2
1
0
0
5
10
15
20
25 30
RG [Ω]
35
40
45
50
0,01
0,001
55
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=5.1Ω,Tvj=150°C
1
10
150
IC, Modul
IC, Chip
150
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
135
120
120
105
105
90
90
IF [A]
IC [A]
0,1
t [s]
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
165
75
75
60
60
45
45
30
30
15
15
0
0,01
0
100
200
300
400 500
VCE [V]
600
700
0
800
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
7
0,0
0,4
0,8
1,2
VF [V]
1,6
2,0
2,4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=5.1Ω,VCE=300V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=75A,VCE=300V
4,0
3,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
3,5
Erec, Tvj = 125°C
Erec, Tvj = 150°C
2,5
3,0
2,0
E [mJ]
E [mJ]
2,5
2,0
1,5
1,5
1,0
1,0
0,5
0,5
0,0
0
15
30
45
60
75 90
IF [A]
0,0
105 120 135 150
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
5
10
15
20
25 30
RG [Ω]
35
40
45
50
55
正向偏压特性二极管,D5-D6(典型)
forwardcharacteristicofDiode,D5-D6(typical)
IF=f(VF)
10
150
ZthJH : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
135
120
105
IF [A]
ZthJH [K/W]
90
1
75
60
45
30
i:
1
2
3
4
ri[K/W]: 0,097 0,219 0,576 0,508
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
15
0
10
0,0
0,4
0,8
1,2
VF [V]
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
8
1,6
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
开关损耗二极管,D5-D6(典型)
switchinglossesDiode,D5-D6(typical)
Erec=f(IF)
RGon=5.1Ω,VCE=300V
开关损耗二极管,D5-D6(典型)
switchinglossesDiode,D5-D6(typical)
Erec=f(RG)
IF=75A,VCE=300V
4,0
3,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
3,5
Erec, Tvj = 125°C
Erec, Tvj = 150°C
2,7
2,4
3,0
2,1
1,8
E [mJ]
E [mJ]
2,5
2,0
1,5
1,2
1,5
0,9
1,0
0,6
0,5
0,0
0,3
0
15
30
45
60
75 90
IF [A]
0,0
105 120 135 150
瞬态热阻抗二极管,D5-D6
transientthermalimpedanceDiode,D5-D6
ZthJH=f(t)
0
5
10
15
20
25 30
RG [Ω]
35
40
45
50
55
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
10
100000
ZthJH : Diode
Rtyp
10000
R[Ω]
ZthJH [K/W]
1
0,1
1000
i:
1
2
3
4
ri[K/W]: 0,062 0,145 0,444 0,449
τi[s]:
0,0005 0,005 0,05 0,2
0,01
0,001
0,01
0,1
t [s]
1
100
10
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
9
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
In fin e o n
preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L75R07W2E3_B11
初步数据
PreliminaryData
使用条件和条款
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preparedby:DK
dateofpublication:2013-11-05
approvedby:MB
revision:2.1
11