技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据/PreliminaryData J VCES = 1200V IC nom = 15A / ICRM = 30A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications 电气特性 • 低电感设计 • 低开关损耗 • 低VCEsat ElectricalFeatures • Lowinductivedesign • LowSwitchingLosses • LowVCEsat 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 紧凑型设计 • PressFIT压接技术 • 集成的安装夹使安装坚固 MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 15 20 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 30 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 145 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 0,50 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge V 1200 VCE sat A A typ. max. 2,05 2,50 2,60 2,40 V V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,075 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 0,875 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,045 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA td on 0,04 0,04 0,04 µs µs µs tr 0,025 0,026 0,027 µs µs µs td off 0,27 0,31 0,32 µs µs µs tf 0,02 0,03 0,035 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGon = 35 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGon = 35 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGoff = 35 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGoff = 35 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 15 A, VCE = 350 V, LS = 30 nH VGE = 15 V, di/dt = 700 A/µs (Tvj = 150°C) RGon = 35 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Eon 0,40 0,60 0,64 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 15 A, VCE = 350 V, LS = 30 nH Tvj = 25°C VGE = 15 V, du/dt = 2800 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 35 Ω Tvj = 150°C Eoff 0,37 0,53 0,54 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,95 1,05 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,80 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 2 tP ≤ 10 µs, Tvj = 150°C 48 150 A °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 1200 V IF 15 A IFRM 50 A I²t 40,0 34,0 特征值/CharacteristicValues min. typ. max. 1,75 1,75 1,75 2,15 A²s A²s 正向电压 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C) VR = 350 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 36,0 38,0 38,0 A A A 恢复电荷 Recoveredcharge IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C) VR = 350 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 1,05 2,10 2,40 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C) VR = 350 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,40 0,66 0,70 mJ mJ mJ V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,30 1,45 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,05 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 3 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData IGBT,三电平/IGBT,3-Level 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C 集电极电流 Implementedcollectorcurrent 连续集电极直流电流 ContinuousDCcollectorcurrent VCES 650 V ICN 30 A TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 15 25 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 60 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 150 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 0,30 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,20 1,25 1,25 1,45 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,30 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,65 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,051 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA td on 0,035 0,035 0,035 µs µs µs tr 0,01 0,012 0,013 µs µs µs td off 0,34 0,38 0,39 µs µs µs tf 0,045 0,07 0,075 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGon = 15 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGon = 15 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGoff = 15 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 15 A, VCE = 350 V VGE = 15 V RGoff = 15 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 15 A, VCE = 350 V, LS = 40 nH Tvj = 25°C VGE = 15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 15 Ω Tvj = 150°C Eon 0,19 0,26 0,28 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 15 A, VCE = 350 V, LS = 40 nH Tvj = 25°C VGE = 15 V, du/dt = 2600 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 15 Ω Tvj = 150°C Eoff 0,47 0,60 0,64 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 210 150 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,90 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 4 tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C 1,00 K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,85 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 K/W 150 °C 二极管,三电平/Diode,3-Level 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 15 A IFRM 30 A I²t 32,0 28,0 特征值/CharacteristicValues min. 正向电压 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 15 A, - diF/dt = 700 A/µs (Tvj=150°C) VR = 350 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 恢复电荷 Recoveredcharge IF = 15 A, - diF/dt = 700 A/µs (Tvj=150°C) VR = 350 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 15 A, - diF/dt = 700 A/µs (Tvj=150°C) VR = 350 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 结－外壳热阻 Thermalresistance,junctiontocase typ. A²s A²s max. 1,45 t.b.d. 1,35 1,30 V V V 13,0 15,0 16,0 A A A Qr 0,60 1,00 1,15 µC µC µC Erec 0,12 0,18 0,22 mJ mJ mJ 每个二极管/perdiode RthJC 1,95 2,15 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,35 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 5 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 13,5 7,5 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 12,0 7,5 mm 相对电痕指数 Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 25 nH Tstg -40 125 °C Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 - 80 N 重量 Weight G 36 g preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 杂散电感,模块 Strayinductancemodule 储存温度 Storagetemperature 6 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 30 30 Tvj = 25°C Tvj = 125°C Tvj = 150°C 24 24 21 21 18 18 15 15 12 12 9 9 6 6 3 3 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 27 IC [A] IC [A] 27 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 0,0 1,0 2,0 3,0 4,0 5,0 VCE [V] 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=35Ω,RGoff=35Ω,VCE=350V 30 2,4 Tvj = 25°C Tvj = 125°C Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 2,2 25 2,0 1,8 20 1,6 E [mJ] IC [A] 1,4 15 1,2 1,0 10 0,8 0,6 5 0,4 0,2 0 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 7 0 3 6 9 12 15 18 IC [A] 21 24 27 30 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=15A,VCE=350V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 3,0 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 2,5 ZthJH : IGBT ZthJH [K/W] E [mJ] 2,0 1,5 1 1,0 0,5 0,0 i: 1 2 3 4 ri[K/W]: 0,129 0,286 0,718 0,617 τi[s]: 0,0005 0,005 0,05 0,2 0 20 40 60 80 0,1 0,001 100 120 140 160 180 200 RG [Ω] 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=35Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 40 30 IC, Modul IC, Chip 35 Tvj = 25°C Tvj = 125°C Tvj = 150°C 27 24 30 21 18 IF [A] IC [A] 25 20 15 12 15 9 10 6 5 0 3 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 8 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=15Ω,VCE=350V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=15A,VCE=350V 1,0 1,0 Erec, Tvj = 125°C Erec, Tvj = 150°C 0,8 0,8 0,7 0,7 0,6 0,6 0,5 0,5 0,4 0,4 0,3 0,3 0,2 0,2 0,1 0,1 0,0 0 5 10 Erec, Tvj = 125°C Erec, Tvj = 150°C 0,9 E [mJ] E [mJ] 0,9 15 IF [A] 20 25 0,0 30 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 15 30 45 60 75 90 RG [Ω] 105 120 135 150 输出特性IGBT,三电平（典型) outputcharacteristicIGBT,3-Level(typical) IC=f(VCE) VGE=15V 10 30,0 ZthJH: Diode 27,5 Tvj = 25°C Tvj = 125°C Tvj = 150°C 25,0 22,5 17,5 IC [A] ZthJH [K/W] 20,0 1 15,0 12,5 10,0 7,5 5,0 i: 1 2 3 4 ri[K/W]: 0,312 0,512 0,904 0,622 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 2,5 0,0 0,00 10 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 9 0,25 0,50 0,75 1,00 1,25 VCE [V] 1,50 1,75 2,00 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 输出特性IGBT,三电平（典型) outputcharacteristicIGBT,3-Level(typical) IC=f(VCE) Tvj=150°C 传输特性IGBT,三电平(典型) transfercharacteristicIGBT,3-Level(typical) IC=f(VGE) VCE=20V 30 30 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 25 Tvj = 25°C Tvj = 125°C Tvj = 150°C 25 20 IC [A] IC [A] 20 15 15 10 10 5 5 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 开关损耗IGBT,三电平（典型) switchinglossesIGBT,3-Level(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=15Ω,RGoff=15Ω,VCE=350V 5 6 7 8 VGE [V] 9 10 11 开关损耗IGBT,三电平（典型) switchinglossesIGBT,3-Level(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=15A,VCE=350V 1,2 2,00 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 1,0 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 1,75 1,50 0,8 E [mJ] E [mJ] 1,25 0,6 1,00 0,75 0,4 0,50 0,2 0,25 0,0 0 5 10 15 IC [A] 20 25 0,00 30 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 10 0 15 30 45 60 75 90 RG [Ω] 105 120 135 150 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 瞬态热阻抗IGBT,三电平 transientthermalimpedanceIGBT,3-Level ZthJH=f(t) 反偏安全工作区IGBT,三电平（RBSOA） reversebiassafeoperatingareaIGBT,3-Level(RBSOA) IC=f(VCE) VGE=±15V,RGoff=15Ω,Tvj=150°C 10 40 ZthJH: IGBT IC, Modul IC, Chip 35 30 IC [A] ZthJH [K/W] 25 1 20 15 10 i: 1 2 3 4 ri[K/W]: 0,142 0,309 0,719 0,58 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 5 0 10 正向偏压特性二极管,三电平（典型) forwardcharacteristicofDiode,3-Level(typical) IF=f(VF) 0 100 200 300 400 VCE [V] 500 600 700 开关损耗二极管,三电平（典型) switchinglossesDiode,3-Level(typical) Erec=f(IF) RGon=35Ω,VCE=350V 30 0,30 Tvj = 25°C Tvj = 125°C Tvj = 150°C 27 Erec, Tvj = 125°C Erec, Tvj = 150°C 0,25 24 21 0,20 E [mJ] IF [A] 18 15 0,15 12 0,10 9 6 0,05 3 0 0,0 0,5 1,0 VF [V] 1,5 0,00 2,0 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 11 0 5 10 15 IF [A] 20 25 30 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 开关损耗二极管,三电平（典型) switchinglossesDiode,3-Level(typical) Erec=f(RG) IF=15A,VCE=350V 瞬态热阻抗二极管,三电平 transientthermalimpedanceDiode,3-Level ZthJH=f(t) 0,30 10 Erec, Tvj = 125°C Erec, Tvj = 150°C ZthJH: Diode 0,25 ZthJH [K/W] E [mJ] 0,20 0,15 1 0,10 0,05 0,00 i: 1 2 3 4 ri[K/W]: 0,3013 0,7006 1,3873 0,9109 τi[s]: 0,0005 0,005 0,05 0,2 0 30 60 90 0,1 0,001 120 150 180 210 240 270 300 RG [Ω] 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 12 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L15R12W2H3_B27 初步数据 PreliminaryData 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines Infineon preparedby:CM 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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CM dateofpublication:2013-11-25 approvedby:MB revision:2.0 14