BSC047N08NS3 G Data Sheet (296 KB, EN)

BSC047N08NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
VDS
80
V
RDS(on),max
4.7
mΩ
ID
100
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC047N08NS3 G
Package
PG-TDSON-8
Marking
047N08NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
79
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
Unit
A
18
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 Ω
310
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
2)
Rev. 2.7
page 1
2012-04-04
BSC047N08NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
125
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
top
Device on PCB
R thJA
K/W
18
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
50
80
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90 µA
2
2.8
3.5
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=80 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
3.9
4.7
mΩ
V GS=6 V, I D=25 A
-
5.6
8.9
-
2.2
-
Ω
60
120
-
S
Gate resistance
RG
Transconductance
g fs
Rev. 2.7
|V DS|>2|I D|R DS(on)max,
I D=100 A
page 2
2012-04-04
BSC047N08NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3600
4800
-
960
1300
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=40 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
36
-
Turn-on delay time
t d(on)
-
18
-
Rise time
tr
-
17
-
Turn-off delay time
t d(off)
-
44
-
Fall time
tf
-
11
-
Gate to source charge
Q gs
-
16
-
Gate charge at threshold
Q g(th)
-
10
-
Gate to drain charge
Q gd
-
10
-
S it hi charge
Switching
h
Q sw
-
17
-
Gate charge total
Qg
-
52
69
Gate plateau voltage
V plateau
-
4.8
-
Output charge
Q oss
-
70
93
nC
-
-
100
A
-
-
400
-
1.0
1.2
V
-
61
-
ns
-
109
-
nC
V DD=40 V, V GS=10 V,
I D=25 A, R G=1.6 Ω
ns
Gate Charge Characteristics5)
V DD=40 V, I D=25 A,
V GS=0 to 10 V
V DD=40 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=40 V, I F=25A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.7
page 3
2012-04-04
BSC047N08NS3 G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
150
120
125
100
100
80
ID [A]
Ptot [W]
1 Power dissipation
75
60
50
40
25
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
TC [°C]
100
125
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
1
ZthJC [K/W]
100 µs
ID [A]
150
101
1 ms
10 ms
0.5
0.2
0.1
0.1
0.05
DC
100
0.02
0.01
single pulse
10-1
100
101
102
0
0
0
0
0
1
10-5
10-4
10-3
10-2
10-1
100
tp [s]
VDS [V]
Rev. 2.7
0.01
10-6
0
10-1
page 4
2012-04-04
BSC047N08NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
20
10 V
4.5 V
6V
5V
15
5.5 V
RDS(on) [mΩ]
ID [A]
120
80
10
5.5 V
5V
6V
40
5
10 V
4.5 V
0
0
0
1
2
3
0
20
VDS [V]
40
60
80
100
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
160
120
110
140
100
120
90
80
100
gfs [S]
ID [A]
70
60
80
50
60
40
40
30
150 °C
20
25 °C
20
10
0
0
0
1
2
3
4
5
6
VGS [V]
Rev. 2.7
0
40
80
120
160
ID [A]
page 5
2012-04-04
BSC047N08NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
10
4
8
3
900 µA
VGS(th) [V]
RDS(on) [mΩ]
90 µA
6
max
typ
4
2
1
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
25 °C
Coss
150 °C
100
IF [A]
C [pF]
150°C, max
102
25°C, max
Crss
10
101
100
1
0
20
40
60
80
VDS [V]
Rev. 2.7
0.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2012-04-04
BSC047N08NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
12
100
40 V
10
VGS [V]
IAV [A]
125 °C
16 V
8
25 °C
100 °C
10
64 V
6
4
2
1
0
0.1
1
10
100
0
1000
10
tAV [µs]
20
30
40
50
60
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
V GS
Qg
90
VBR(DSS) [V]
80
70
V g s(th)
60
50
Q g (th)
Q sw
Q gs
40
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.7
page 7
2012-04-04
BSC047N08NS3 G
PG-TDSON-8
Rev. 2.7
page 8
2012-04-04
BSC047N08NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Rev. 2.7
page 9
2012-04-04